TY - JOUR
T1 - Photostability of Organic Field-Effect Transistors
AU - Li, Ning
AU - Lei, Yanlian
AU - Lau, Ying Suet
AU - Sui, Xiubao
AU - Zhu, Furong
N1 - Funding Information:
This work was financially supported by the Research Grants Council, University Grants Committee, Hong Kong, General Research Fund (12302817,12303920); SZ-HK-Macau Science and Technology Plan Project (SGDX20201103095400005); and Guangdong Basic and Applied Basic Research Fund (2022A1515010020). N.L. and X.S. are thankful for the support from the National Natural Science Foundation of China (62105152) and National Key Laboratory of Science and Technology on Multispectral Information Processing (6142113210205).
Publisher copyright:
© 2023 The Authors. Published by American Chemical Society
PY - 2023/7/28
Y1 - 2023/7/28
N2 - Fluctuation in channel current in the organic field-effect transistors (OFETs) under illumination, caused by the photoresponse of the polymer channel layer, is one of the critical factors influencing the operational stability of the OFET-based backplane. In this work, a mechanistic study of the photostability of the OFETs was carried out. A sample front-end driving circuit, comprising an OFET and an organic light-emitting diode unit, was used to analyze the photostability of the OFET under the illumination of near-infrared (850 nm) light, which corresponds to the peak absorption of the polymer channel layer. The results reveal that photostable OFETs with a negligible change in the channel current and the threshold voltage can be realized by mitigating the defect-associated charge trapping and detrapping processes under illumination, enabled by improved molecular packing in the polymer channel layer. The outcomes of this work provide important insight and OFET design knowledge for a plethora of applications in front-end circuits, image sensors, and flexible displays.
AB - Fluctuation in channel current in the organic field-effect transistors (OFETs) under illumination, caused by the photoresponse of the polymer channel layer, is one of the critical factors influencing the operational stability of the OFET-based backplane. In this work, a mechanistic study of the photostability of the OFETs was carried out. A sample front-end driving circuit, comprising an OFET and an organic light-emitting diode unit, was used to analyze the photostability of the OFET under the illumination of near-infrared (850 nm) light, which corresponds to the peak absorption of the polymer channel layer. The results reveal that photostable OFETs with a negligible change in the channel current and the threshold voltage can be realized by mitigating the defect-associated charge trapping and detrapping processes under illumination, enabled by improved molecular packing in the polymer channel layer. The outcomes of this work provide important insight and OFET design knowledge for a plethora of applications in front-end circuits, image sensors, and flexible displays.
KW - Organic field-effect transistors
KW - charge carrier activation energy
KW - molecular packing
KW - near-infrared
KW - photostability
UR - http://www.scopus.com/inward/record.url?scp=85166748913&partnerID=8YFLogxK
U2 - 10.1021/acsanm.3c00250
DO - 10.1021/acsanm.3c00250
M3 - Journal article
SN - 2574-0970
VL - 6
SP - 12704
EP - 12710
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
IS - 14
ER -
