Photostability of Organic Field-Effect Transistors

Ning Li, Yanlian Lei, Ying Suet Lau, Xiubao Sui, Furong Zhu*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review


Fluctuation in channel current in the organic field-effect transistors (OFETs) under illumination, caused by the photoresponse of the polymer channel layer, is one of the critical factors influencing the operational stability of the OFET-based backplane. In this work, a mechanistic study of the photostability of the OFETs was carried out. A sample front-end driving circuit, comprising an OFET and an organic light-emitting diode unit, was used to analyze the photostability of the OFET under the illumination of near-infrared (850 nm) light, which corresponds to the peak absorption of the polymer channel layer. The results reveal that photostable OFETs with a negligible change in the channel current and the threshold voltage can be realized by mitigating the defect-associated charge trapping and detrapping processes under illumination, enabled by improved molecular packing in the polymer channel layer. The outcomes of this work provide important insight and OFET design knowledge for a plethora of applications in front-end circuits, image sensors, and flexible displays.
Original languageEnglish
Pages (from-to)12704–12710
Number of pages7
JournalACS Applied Nano Materials
Issue number14
Early online date16 Jul 2023
Publication statusPublished - 28 Jul 2023

User-Defined Keywords

  • Organic field-effect transistors
  • charge carrier activation energy
  • molecular packing
  • near-infrared
  • photostability


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