Photon-induced reactions of No adsorbed on GaAs(110)

S. K. So; W. Ho

doi:10.1007/BF00615926

Photon-induced reactions of No adsorbed on GaAs(110)

S. K. So, W. Ho

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

35 Citations (Scopus)

Abstract

The interaction of cw laser radiation with NO adsorbed on GaAs(110) at 90 K has been studied over a wide range of wavelengths from 457 to 900 nm by high resolution electron energy loss spectroscopy (HREELS), thermal desorption spectroscopy (TDS), and laser induced desorption spectroscopy (LIDS). Adsorption of molecular NO is observed. By varying the incident laser power, it is found that desorption and dissociation of molecular NO are induced by a nonthermal process. By measuring the time profile and the power and wavelength dependence of the desorption signal, the observed desorption and dissociation of NO are attributed to interactions of the adsorbed NO with the photogenerated carriers which migrate to the surface.

Original language	English
Pages (from-to)	213-217
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	47
Issue number	3
DOIs	https://doi.org/10.1007/BF00615926
Publication status	Published - Nov 1988

Scopus Subject Areas

General Materials Science
General Engineering
Physics and Astronomy (miscellaneous)

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10.1007/BF00615926

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title = "Photon-induced reactions of No adsorbed on GaAs(110)",

abstract = "The interaction of cw laser radiation with NO adsorbed on GaAs(110) at 90 K has been studied over a wide range of wavelengths from 457 to 900 nm by high resolution electron energy loss spectroscopy (HREELS), thermal desorption spectroscopy (TDS), and laser induced desorption spectroscopy (LIDS). Adsorption of molecular NO is observed. By varying the incident laser power, it is found that desorption and dissociation of molecular NO are induced by a nonthermal process. By measuring the time profile and the power and wavelength dependence of the desorption signal, the observed desorption and dissociation of NO are attributed to interactions of the adsorbed NO with the photogenerated carriers which migrate to the surface.",

author = "So, {S. K.} and W. Ho",

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AU - So, S. K.

AU - Ho, W.

PY - 1988/11

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N2 - The interaction of cw laser radiation with NO adsorbed on GaAs(110) at 90 K has been studied over a wide range of wavelengths from 457 to 900 nm by high resolution electron energy loss spectroscopy (HREELS), thermal desorption spectroscopy (TDS), and laser induced desorption spectroscopy (LIDS). Adsorption of molecular NO is observed. By varying the incident laser power, it is found that desorption and dissociation of molecular NO are induced by a nonthermal process. By measuring the time profile and the power and wavelength dependence of the desorption signal, the observed desorption and dissociation of NO are attributed to interactions of the adsorbed NO with the photogenerated carriers which migrate to the surface.

AB - The interaction of cw laser radiation with NO adsorbed on GaAs(110) at 90 K has been studied over a wide range of wavelengths from 457 to 900 nm by high resolution electron energy loss spectroscopy (HREELS), thermal desorption spectroscopy (TDS), and laser induced desorption spectroscopy (LIDS). Adsorption of molecular NO is observed. By varying the incident laser power, it is found that desorption and dissociation of molecular NO are induced by a nonthermal process. By measuring the time profile and the power and wavelength dependence of the desorption signal, the observed desorption and dissociation of NO are attributed to interactions of the adsorbed NO with the photogenerated carriers which migrate to the surface.

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

ER -

Photon-induced reactions of No adsorbed on GaAs(110)

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