Abstract
The authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices.
Original language | English |
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Article number | 103102 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 10 |
DOIs | |
Publication status | Published - 5 Mar 2007 |
Scopus Subject Areas
- Physics and Astronomy (miscellaneous)