Skip to main navigation
Skip to search
Skip to main content
Hong Kong Baptist University Home
Help & FAQ
Link opens in a new tab
Search content at Hong Kong Baptist University
Home
Scholars
Departments / Units
Research Output
Projects / Grants
Prizes / Awards
Activities
Student theses
Datasets
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
L. S. Wang
, W. K. Fong
, C. Surya
*
, K. W. Cheah
, W. H. Zheng
, Z. G. Wang
*
Corresponding author for this work
Department of Physics
Research output
:
Contribution to journal
›
Journal article
›
peer-review
13
Citations (Scopus)
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Photoluminescence of rapid-thermal annealed Mg-doped GaN films'. Together they form a unique fingerprint.
Sort by:
Weight
Alphabetically
Keyphrases
GaN Films
100%
Photoluminescence
100%
Thermal Annealing
100%
Emission Lines
100%
Mg-doped GaN
100%
Photoluminescence Spectroscopy
50%
Emission Spectrum
50%
Blue Shift
50%
Peak Position
50%
Annealing Conditions
50%
Rapid Thermal Annealing
50%
Excitation Power
50%
Temperature Conditions
50%
Edge-level
50%
GaN Epitaxial Layers
50%
Coulomb Potential
50%
Potential Fluctuations
50%
Impurity Levels
50%
Metal-organic Chemical Vapor Deposition (MOCVD)
50%
Device Temperature
50%
Recombination Mechanism
50%
Donor-acceptor Recombination
50%
Sapphire
50%
Complex Dissociation
50%
Conduction Band Edge
50%
Valence Band Edge
50%
Excitation Power Dependence
50%
Engineering
Emission Spectra
100%
Valence Band
100%
Conduction Band
100%
Blueshift
100%
Vapor Deposition
100%
Band Edge
100%
Impurity Level
100%
Chemical Vapor Deposition
100%
Epitaxial Film
100%
Rapid Thermal Annealing
100%
Material Science
Photoluminescence
100%
Film
100%
Annealing
100%
Chemical Vapor Deposition
50%
Sapphire
50%
Epitaxial Film
50%