Abstract
We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg-related emissions. It is observed that the peak position of the 2.7-2.8 eV emission line is a function of the device temperature and annealing conditions. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the Mg-related complex dissociation. The blue shift of the 2.7-2.8 eV emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. In addition, quenching of minor peaks at 3.2 and 3.3 eV are observed and their possible origin is discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 1153-1157 |
| Number of pages | 5 |
| Journal | Solid-State Electronics |
| Volume | 45 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 2001 |
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
User-Defined Keywords
- Metalorganic chemical vapor deposition
- p-Type GaN
- Photoluminescence
- Rapid-thermal annealing
- X-ray diffraction