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Photoluminescence of rapid-thermal annealed Mg-doped GaN films
L. S. Wang
*
, W. K. Fong
, C. Surya
, Kok Wai Cheah
, W. H. Zheng
, Z. Wang
*
Corresponding author for this work
Department of Physics
Research output
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peer-review
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Keyphrases
GaN Films
100%
Photoluminescence
100%
Thermal Annealing
100%
Excitation Power
100%
Emission Lines
100%
Mg-doped GaN
100%
Power Dependence
50%
Photoluminescence Spectroscopy
50%
Emission Spectrum
50%
Blue Shift
50%
Peak Position
50%
Rapid Thermal Annealing
50%
Valence
50%
Annealing Process
50%
GaN Epitaxial Layers
50%
Coulomb Potential
50%
Potential Fluctuations
50%
Impurity Levels
50%
Metal-organic Chemical Vapor Deposition (MOCVD)
50%
Device Temperature
50%
Recombination Mechanism
50%
Donor-acceptor Recombination
50%
Sapphire
50%
Complex Dissociation
50%
Engineering
Emission Spectra
100%
Blueshift
100%
Vapor Deposition
100%
Impurity Level
100%
Chemical Vapor Deposition
100%
Epitaxial Film
100%
Rapid Thermal Annealing
100%
Material Science
Photoluminescence
100%
Film
100%
Annealing
100%
Chemical Vapor Deposition
50%
Sapphire
50%
Epitaxial Film
50%