Photoluminescence of rapid-thermal annealed Mg-doped GaN films

L. S. Wang*, W. K. Fong, C. Surya, Kok Wai Cheah, W. H. Zheng, Z. Wang

*Corresponding author for this work

Research output: Contribution to conferenceConference paperpeer-review

Abstract

We report investigation of temperature and excitation power dependencies in photoluminescence spectroscopy measured from Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg related emissions. It is observed that the peak position of the 2.7 approx. 2.8 eV emission line is a function of the device temperature and detailed annealing procedure. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence bandedges and impurity levels due to the Mg-related complex dissociation. The blue shifts of the 2.7 approx. 2.8 eV emission lines with increasing excitation power provides clear evidence that donor-acceptor recombination process underlies the observed emission spectrum.

Original languageEnglish
Pages154-157
Number of pages4
Publication statusPublished - 1999
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: 26 Jun 199926 Jun 1999

Conference

Conference1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period26/06/9926/06/99

Scopus Subject Areas

  • Engineering(all)

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