Abstract
We report investigation of temperature and excitation power dependencies in photoluminescence spectroscopy measured from Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg related emissions. It is observed that the peak position of the 2.7 approx. 2.8 eV emission line is a function of the device temperature and detailed annealing procedure. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence bandedges and impurity levels due to the Mg-related complex dissociation. The blue shifts of the 2.7 approx. 2.8 eV emission lines with increasing excitation power provides clear evidence that donor-acceptor recombination process underlies the observed emission spectrum.
Original language | English |
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Pages | 154-157 |
Number of pages | 4 |
Publication status | Published - 1999 |
Event | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong Duration: 26 Jun 1999 → 26 Jun 1999 |
Conference
Conference | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) |
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City | Shatin, Hong Kong |
Period | 26/06/99 → 26/06/99 |
Scopus Subject Areas
- General Engineering