Photoluminescence of laser ablated silicon

K. L. Pong, S. C. Chen, Kok Wai CHEAH*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The change in silicon morphology can induce silicon to luminescence in the visible spectrum range. Several examples were reported; porous silicon[1], spark eroded silicon[2], and plasma deposited silicon cluster[3]. In this report we used a Nd-YAG laser to ablate single crystal silicon, and anodically prepared porous silicon. The ablated sites were subjected to photoluminescence measurement. The 325 nm line of He-Cd laser was used for excitation, and a photoluminescence spectrum with a peak at about 450 nm was obtained. However, this peak was only observed after the samples were exposed to air for several days. The violet photoluminescence spectrum was considered to be due to room temperature annealing of ablated sites.

Original languageEnglish
Pages (from-to)887-890
Number of pages4
JournalSolid State Communications
Volume99
Issue number12
DOIs
Publication statusPublished - Sep 1996

Scopus Subject Areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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