Photoluminescence of erbium, zinc, and copper doped porous silicon and a phenomenological model for the metal electrodeposition

J. X. Shi*, X. X. Zhang, M. L. Gong, J. Y. Zhou, Kok Wai CHEAH, Rick W K WONG

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

High concentrations of metals Er, Cu and Zn, were potentiostatically electrodeposited into porous silicon (PS). Er doping was found to improve the room-temperature visible photoluminescence (PL) of PS, whereas Cu and Zn doping seemed to have a quenching effect. The current densities decreased exponentially with doping time in the entire electrodepositing processes of Er and Zn, which was true just in the beginning of Cu depositing. A phenomenological model based on the adsorption on the PS surface and the reduction of metal ions is proposed to explain the exponential dependence of the current density on doping time.

Original languageEnglish
Pages (from-to)353-357
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume182
Issue number1
DOIs
Publication statusPublished - Nov 2000

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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