Photoluminescence from boron-doped titanium nitride nanocomposite thin films prepared by the magnetron sputtering method

Sheng Guo Lu, Yong Hao Lu*, Zheng Kui Xu, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Boron-doped titanium nitride (TiBN) thin films with nanosized grains were prepared by a magnetron sputtering method. X-ray diffraction and transmission electron microscopy observation indicated that TiBN thin films have a cubic structure with grains ∼5 nm in size. The photoluminescence (PL) of the films was investigated as a function of temperature over a wavelength range of 350-900 nm. Two PL peaks near 3.20 and 2.38 eV were conisdered to have resulted from the recombination of the donor-bound excitons and deep-trap defects with the holes in the valence band, respectively. An energy transfer from bound electrons to deep-trap defects was observed in the nanocomposite thin film.

Original languageEnglish
Pages (from-to)4002-4004
Number of pages3
JournalJournal of the American Ceramic Society
Volume90
Issue number12
DOIs
Publication statusPublished - Dec 2007

Scopus Subject Areas

  • Ceramics and Composites
  • Materials Chemistry

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