Abstract
Boron-doped titanium nitride (TiBN) thin films with nanosized grains were prepared by a magnetron sputtering method. X-ray diffraction and transmission electron microscopy observation indicated that TiBN thin films have a cubic structure with grains ∼5 nm in size. The photoluminescence (PL) of the films was investigated as a function of temperature over a wavelength range of 350-900 nm. Two PL peaks near 3.20 and 2.38 eV were conisdered to have resulted from the recombination of the donor-bound excitons and deep-trap defects with the holes in the valence band, respectively. An energy transfer from bound electrons to deep-trap defects was observed in the nanocomposite thin film.
Original language | English |
---|---|
Pages (from-to) | 4002-4004 |
Number of pages | 3 |
Journal | Journal of the American Ceramic Society |
Volume | 90 |
Issue number | 12 |
DOIs | |
Publication status | Published - Dec 2007 |
Scopus Subject Areas
- Ceramics and Composites
- Materials Chemistry