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Photochemical etching of silicon
M. L. Ngan
*
, K. C. Lee
, K. W. Cheah
*
Corresponding author for this work
Department of Physics
Research output
:
Contribution to journal
›
Conference article
›
peer-review
10
Citations (Scopus)
Overview
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Dive into the research topics of 'Photochemical etching of silicon'. Together they form a unique fingerprint.
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Keyphrases
Quantum Confinement
100%
Porous Silicon
100%
Fine Wire
100%
Photochemical Etching
100%
Laser Wavelength
50%
Visible Spectrum
50%
Photoluminescence Spectra
50%
Full Width at Half Maximum
50%
Etching Rate
50%
Physical Model
50%
Silicon Structure
50%
Hydrofluoric Acid
50%
Anodizing Process
50%
Laser Power Density
50%
Directional Etching
50%
Laser Control
50%
Columnar Structure
50%
Engineering
Quantum Confinement
100%
Porous Silicon
100%
Directional
100%
Laser Wavelength
50%
Anodization
50%
Physical Model
50%
Columnar Structure
50%
Laser Power Density
50%
Supporting Evidence
50%
Material Science
Silicon
100%
Porous Silicon
66%
Density
33%
Photoluminescence
33%
Anodizing
33%
Physics
Porous Silicon
100%
Photoluminescence
50%
Visible Spectrum
50%
Anodizing
50%
Chemical Engineering
Hydrofluoric Acid
100%