P-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN

A. M.C. Ng, X. Y. Chen, F. Fang, A. B. Djurišić*, W. K. Chan, Kok Wai CHEAH

*Corresponding author for this work

Research output: Chapter in book/report/conference proceedingConference proceedingpeer-review

Abstract

We studied the effect of carrier concentration in p-GaN substrate on the performance of p-GaN/n-ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p-GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine. The morphology and optical properties of ZnO nanorods were studied using photoluminescence and electron microscopy, and the LED device performance was studied by electroluminescence (EL) and I-V measurements.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages579-580
Number of pages2
DOIs
Publication statusPublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
Country/TerritoryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Scopus Subject Areas

  • Physics and Astronomy(all)

User-Defined Keywords

  • electrodeposition
  • ZnO nanorods

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