P-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN

A. M.C. Ng; X. Y. Chen; F. Fang; A. B. Djurišić; W. K. Chan; Kok Wai CHEAH

doi:10.1063/1.3666512

P-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN

A. M.C. Ng, X. Y. Chen, F. Fang, A. B. Djurišić^*, W. K. Chan, Kok Wai CHEAH

^*Corresponding author for this work

Department of Physics

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

Abstract

We studied the effect of carrier concentration in p-GaN substrate on the performance of p-GaN/n-ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p-GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine. The morphology and optical properties of ZnO nanorods were studied using photoluminescence and electron microscopy, and the LED device performance was studied by electroluminescence (EL) and I-V measurements.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	579-580
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666512
Publication status	Published - 2011
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 25 Jul 2010 → 30 Jul 2010

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	25/07/10 → 30/07/10

Scopus Subject Areas

General Physics and Astronomy

User-Defined Keywords

electrodeposition
ZnO nanorods

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10.1063/1.3666512

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@inproceedings{c82b80fc6d0348fb8c239100adcff519,

title = "P-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN",

abstract = "We studied the effect of carrier concentration in p-GaN substrate on the performance of p-GaN/n-ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p-GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine. The morphology and optical properties of ZnO nanorods were studied using photoluminescence and electron microscopy, and the LED device performance was studied by electroluminescence (EL) and I-V measurements.",

keywords = "electrodeposition, ZnO nanorods",

author = "Ng, {A. M.C.} and Chen, {X. Y.} and F. Fang and Djuri{\v s}i{\'c}, {A. B.} and Chan, {W. K.} and CHEAH, {Kok Wai}",

year = "2011",

doi = "10.1063/1.3666512",

language = "English",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "579--580",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

}

Ng, AMC, Chen, XY, Fang, F, Djurišić, AB, Chan, WK & CHEAH, KW 2011, P-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 579-580, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 25/07/10. https://doi.org/10.1063/1.3666512

P-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN. / Ng, A. M.C.; Chen, X. Y.; Fang, F. et al.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 579-580 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

TY - GEN

T1 - P-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN

AU - Ng, A. M.C.

AU - Chen, X. Y.

AU - Fang, F.

AU - Djurišić, A. B.

AU - Chan, W. K.

AU - CHEAH, Kok Wai

PY - 2011

Y1 - 2011

N2 - We studied the effect of carrier concentration in p-GaN substrate on the performance of p-GaN/n-ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p-GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine. The morphology and optical properties of ZnO nanorods were studied using photoluminescence and electron microscopy, and the LED device performance was studied by electroluminescence (EL) and I-V measurements.

AB - We studied the effect of carrier concentration in p-GaN substrate on the performance of p-GaN/n-ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p-GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine. The morphology and optical properties of ZnO nanorods were studied using photoluminescence and electron microscopy, and the LED device performance was studied by electroluminescence (EL) and I-V measurements.

KW - electrodeposition

KW - ZnO nanorods

UR - http://www.scopus.com/inward/record.url?scp=84862818861&partnerID=8YFLogxK

U2 - 10.1063/1.3666512

DO - 10.1063/1.3666512

M3 - Conference proceeding

AN - SCOPUS:84862818861

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 579

EP - 580

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

P-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN

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