p-Doped p-phenylenediamine-substituted fluorenes for organic electroluminescent devices

  • Zhi Qiang Gao*
  • , Ping Fan Xia
  • , Pik Kwan Lo
  • , Bao Xiu Mi
  • , Hoi Lam TAM
  • , Ricky M S WONG
  • , Kok Wai CHEAH
  • , Chin H. Chen
  • *Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

15 Citations (Scopus)

Abstract

Two novel p-phenylenediamine-substituted fluorenes have been designed and synthesized. Their applications as hole injection materials in organic electroluminescent devices were investigated. These materials show a high glass transition temperature and a good hole-transporting ability. It has been demonstrated that the 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) doped p-phenylene-diamine-substituted fluorenes, in which F4-TCNQ acts as p-type dopant, are highly conducting with a good hole-transporting property. The organic light emitting devices (OLEDs) utilizing these F4-TCNQ-doped materials as a hole injection layer were fabricated and investigated. The pure Alq3-based OLED device shows a current efficiency of 5.2 cd/A at the current density of 20 mA/cm2 and the operation lifetime is 1500 h with driving voltage increasing only about 0.7 mV/h. The device performance and stability of this hole injection material meet the benchmarks for the commercial requirements for OLED materials.

Original languageEnglish
Pages (from-to)666-673
Number of pages8
JournalOrganic Electronics
Volume10
Issue number4
DOIs
Publication statusPublished - Jul 2009

User-Defined Keywords

  • Fluorene
  • Hole injection material
  • Hole transporting materials
  • Organic electroluminescent devices
  • p-Phenylenediamine

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