Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane as p -type dopant

Bao Xiu Mi; Zhi Qiang Gao; Kok Wai CHEAH; Chin H. Chen

doi:10.1063/1.3073719

Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane as p -type dopant

Bao Xiu Mi, Zhi Qiang Gao, Kok Wai CHEAH, Chin H. Chen

Research output: Contribution to journal › Journal article › peer-review

34 Citations (Scopus)

Abstract

We demonstrate that 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane (F2-HCNQ) can serve as an excellent electrical doping material for hole transport materials with the highest occupied molecular orbital level as high as 5.4 eV, such as N, N′ -di(naphthalene-1-yl)- N, N′ -diphenyl-benzidine (NPB). With its relatively strong electron-accepting ability and high thermal stability, F2-HCNQ doped NPB organic light-emitting diode (OLED) showed improved power efficiency with low driving voltage. The tris(8-hydroxyquinoline)aluminum based OLED with F2-HCNQ doped NPB layer and Cs₂O doped bathophenanthroline electron transport layer exhibits power efficiency of 3.6 lm/W with driving voltage of 3.2 V at 100 cd/ m2.

Original language	English
Article number	073507
Journal	Applied Physics Letters
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.3073719
Publication status	Published - 2009

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@article{68c2a2b5ed534007ad712ff193ad6d42,

title = "Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane as p -type dopant",

abstract = "We demonstrate that 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane (F2-HCNQ) can serve as an excellent electrical doping material for hole transport materials with the highest occupied molecular orbital level as high as 5.4 eV, such as N, N′ -di(naphthalene-1-yl)- N, N′ -diphenyl-benzidine (NPB). With its relatively strong electron-accepting ability and high thermal stability, F2-HCNQ doped NPB organic light-emitting diode (OLED) showed improved power efficiency with low driving voltage. The tris(8-hydroxyquinoline)aluminum based OLED with F2-HCNQ doped NPB layer and Cs2O doped bathophenanthroline electron transport layer exhibits power efficiency of 3.6 lm/W with driving voltage of 3.2 V at 100 cd/ m2.",

author = "Mi, {Bao Xiu} and Gao, {Zhi Qiang} and CHEAH, {Kok Wai} and Chen, {Chin H.}",

note = "Funding Information: We are grateful to the funding of Faculty Research Grant to Professor Fred Chen from Hong Kong Baptist University (Grant No. FRG/05-06/II-43), and financial support from Nanjing University of Posts and Telecommunications (Grant No. NY207162), Natural Science Foundation of Jiangsu High Education (Grant No. 08KJB430011), and e-Ray Optoelectronics, Ltd. TW for providing some of the OLED materials for this work.",

year = "2009",

doi = "10.1063/1.3073719",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane as p -type dopant

AU - Mi, Bao Xiu

AU - Gao, Zhi Qiang

AU - CHEAH, Kok Wai

AU - Chen, Chin H.

N1 - Funding Information: We are grateful to the funding of Faculty Research Grant to Professor Fred Chen from Hong Kong Baptist University (Grant No. FRG/05-06/II-43), and financial support from Nanjing University of Posts and Telecommunications (Grant No. NY207162), Natural Science Foundation of Jiangsu High Education (Grant No. 08KJB430011), and e-Ray Optoelectronics, Ltd. TW for providing some of the OLED materials for this work.

PY - 2009

Y1 - 2009

N2 - We demonstrate that 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane (F2-HCNQ) can serve as an excellent electrical doping material for hole transport materials with the highest occupied molecular orbital level as high as 5.4 eV, such as N, N′ -di(naphthalene-1-yl)- N, N′ -diphenyl-benzidine (NPB). With its relatively strong electron-accepting ability and high thermal stability, F2-HCNQ doped NPB organic light-emitting diode (OLED) showed improved power efficiency with low driving voltage. The tris(8-hydroxyquinoline)aluminum based OLED with F2-HCNQ doped NPB layer and Cs2O doped bathophenanthroline electron transport layer exhibits power efficiency of 3.6 lm/W with driving voltage of 3.2 V at 100 cd/ m2.

AB - We demonstrate that 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane (F2-HCNQ) can serve as an excellent electrical doping material for hole transport materials with the highest occupied molecular orbital level as high as 5.4 eV, such as N, N′ -di(naphthalene-1-yl)- N, N′ -diphenyl-benzidine (NPB). With its relatively strong electron-accepting ability and high thermal stability, F2-HCNQ doped NPB organic light-emitting diode (OLED) showed improved power efficiency with low driving voltage. The tris(8-hydroxyquinoline)aluminum based OLED with F2-HCNQ doped NPB layer and Cs2O doped bathophenanthroline electron transport layer exhibits power efficiency of 3.6 lm/W with driving voltage of 3.2 V at 100 cd/ m2.

UR - http://www.scopus.com/inward/record.url?scp=60749084469&partnerID=8YFLogxK

U2 - 10.1063/1.3073719

DO - 10.1063/1.3073719

M3 - Journal article

AN - SCOPUS:60749084469

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073507

ER -

Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane as p -type dopant

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