Optical properties of porous silicon/poly(p phenylene vinylene) devices

Thien Phap Nguyen*, Philippe Le Rendu, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Citations (Scopus)


Hybrid devices formed by filling porous silicon with poly(p phenylene vinylene) or PPV have been investigated in this work. Analyses of the devices by scanning electron microscopy (SEM), infrared (IR), Raman spectroscopy demonstrated that the porous silicon layer was filled by the polymer with no significant change of the structure of the components. This suggests that there is no interaction between the materials. The photoluminescence (PL) of the devices was investigated at different temperatures (from 11 to 290 K). At low temperature, emission of both materials are observed, that of porous silicon occurs at 398 nm while PPV has two main bands located at 528 and 570 nm. As the temperature increases, the PL intensity of porous silicon decreases and the PPV spectra are blue shifted. The dominant peak of PPV at 515 nm suggests that very thin film has been formed in the pores of porous silicon in agreement with the results obtained by SEM, IR and Raman spectroscopy.

Original languageEnglish
Pages (from-to)664-665
Number of pages2
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-4
Publication statusPublished - Apr 2003
EventProceedings pf the International Conference on Superlattices - ICSNN 2002 - Touluse, France
Duration: 22 Jul 200226 Jul 2002

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

User-Defined Keywords

  • Optical properties
  • Polymer
  • Porous silicon


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