Abstract
Using the fundamental transition state, we will investigate the two phase interdiffusion of group V sublattice in a strained lattice matched InGaAs/InP quantum well (QW) structures. The model employs three parameters namely the diffusion coefficients in the barrier (Db)and in the well (Dw)and the concentration ratio (k) of the diffused species at the heterostructure. The QW model includes the effects of strain and the exciton. A pseudo time dependent calculation is also considered and results are fitted to the reported experimental data. These parameters which characterize the diffusion mechanism can be measure to form a better understanding of the interdiffusion process for group V sublattice.
| Original language | English |
|---|---|
| Pages (from-to) | 289-296 |
| Number of pages | 8 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 417 |
| Publication status | Published - 1996 |
| Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: 27 Nov 1995 → 1 Dec 1995 |
Scopus Subject Areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering