Optical properties of InGaAs(P)/InP under group V sublattice two-phase interdiffusion

E. Herbert Li*, Joseph Micallef, Wai Chee Shiu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Using the fundamental transition state, we will investigate the two phase interdiffusion of group V sublattice in a strained lattice matched InGaAs/InP quantum well (QW) structures. The model employs three parameters namely the diffusion coefficients in the barrier (Db)and in the well (Dw)and the concentration ratio (k) of the diffused species at the heterostructure. The QW model includes the effects of strain and the exciton. A pseudo time dependent calculation is also considered and results are fitted to the reported experimental data. These parameters which characterize the diffusion mechanism can be measure to form a better understanding of the interdiffusion process for group V sublattice.

Original languageEnglish
Pages (from-to)289-296
Number of pages8
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 27 Nov 19951 Dec 1995

Scopus Subject Areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Optical properties of InGaAs(P)/InP under group V sublattice two-phase interdiffusion'. Together they form a unique fingerprint.

Cite this