Optical and structural characteristics of Nd:YVO4 film on SiO2/Si substrate fabricated by pulsed laser deposition

F. Wang; S. N. Zhu; Kok Wai CHEAH

doi:10.1063/1.2192147

Optical and structural characteristics of Nd:YVO₄ film on SiO₂/Si substrate fabricated by pulsed laser deposition

F. Wang^*, S. N. Zhu, Kok Wai CHEAH

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

3 Citations (Scopus)

Abstract

The Nd:YV O4 thin films with a -axis preferred orientation have been grown on Si O2 Si substrates using pulsed laser deposition. Their structural, spectroscopic ellipsometric, and emission characteristics have been systematically studied. The lower ambient oxygen pressure during deposition would lead to better crystallinity in the films. The fluorescence at 1064.8 and 1342 nm in the Nd:YV O4 films was excited with an 808 nm diode laser as pump. The results show that the highly a -axis oriented Nd:YV O4 films grown on Si substrates may have potential applications in actively integrated circuits.

Original language	English
Article number	096103
Journal	Journal of Applied Physics
Volume	99
Issue number	9
DOIs	https://doi.org/10.1063/1.2192147
Publication status	Published - 1 May 2006

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General Physics and Astronomy

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@article{a4cd66957dd340e0a5f8195c41316f8d,

title = "Optical and structural characteristics of Nd:YVO4 film on SiO2/Si substrate fabricated by pulsed laser deposition",

abstract = "The Nd:YV O4 thin films with a -axis preferred orientation have been grown on Si O2 Si substrates using pulsed laser deposition. Their structural, spectroscopic ellipsometric, and emission characteristics have been systematically studied. The lower ambient oxygen pressure during deposition would lead to better crystallinity in the films. The fluorescence at 1064.8 and 1342 nm in the Nd:YV O4 films was excited with an 808 nm diode laser as pump. The results show that the highly a -axis oriented Nd:YV O4 films grown on Si substrates may have potential applications in actively integrated circuits.",

author = "F. Wang and Zhu, {S. N.} and CHEAH, {Kok Wai}",

note = "This work is supported by the National Natural Science Foundation of China under Contract Nos. 10534020 and 60578034. ",

year = "2006",

month = may,

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doi = "10.1063/1.2192147",

language = "English",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Optical and structural characteristics of Nd:YVO4 film on SiO2/Si substrate fabricated by pulsed laser deposition

AU - Wang, F.

AU - Zhu, S. N.

AU - CHEAH, Kok Wai

N1 - This work is supported by the National Natural Science Foundation of China under Contract Nos. 10534020 and 60578034.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - The Nd:YV O4 thin films with a -axis preferred orientation have been grown on Si O2 Si substrates using pulsed laser deposition. Their structural, spectroscopic ellipsometric, and emission characteristics have been systematically studied. The lower ambient oxygen pressure during deposition would lead to better crystallinity in the films. The fluorescence at 1064.8 and 1342 nm in the Nd:YV O4 films was excited with an 808 nm diode laser as pump. The results show that the highly a -axis oriented Nd:YV O4 films grown on Si substrates may have potential applications in actively integrated circuits.

AB - The Nd:YV O4 thin films with a -axis preferred orientation have been grown on Si O2 Si substrates using pulsed laser deposition. Their structural, spectroscopic ellipsometric, and emission characteristics have been systematically studied. The lower ambient oxygen pressure during deposition would lead to better crystallinity in the films. The fluorescence at 1064.8 and 1342 nm in the Nd:YV O4 films was excited with an 808 nm diode laser as pump. The results show that the highly a -axis oriented Nd:YV O4 films grown on Si substrates may have potential applications in actively integrated circuits.

UR - http://www.scopus.com/inward/record.url?scp=33646857291&partnerID=8YFLogxK

U2 - 10.1063/1.2192147

DO - 10.1063/1.2192147

M3 - Journal article

AN - SCOPUS:33646857291

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 096103

ER -

Optical and structural characteristics of Nd:YVO₄ film on SiO₂/Si substrate fabricated by pulsed laser deposition

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