The Nd:YV O4 thin films with a -axis preferred orientation have been grown on Si O2 Si substrates using pulsed laser deposition. Their structural, spectroscopic ellipsometric, and emission characteristics have been systematically studied. The lower ambient oxygen pressure during deposition would lead to better crystallinity in the films. The fluorescence at 1064.8 and 1342 nm in the Nd:YV O4 films was excited with an 808 nm diode laser as pump. The results show that the highly a -axis oriented Nd:YV O4 films grown on Si substrates may have potential applications in actively integrated circuits.
|Journal||Journal of Applied Physics|
|Publication status||Published - 1 May 2006|
Scopus Subject Areas
- Physics and Astronomy(all)