Optical and structural characteristics of Nd:YVO4 film on SiO2/Si substrate fabricated by pulsed laser deposition

F. Wang*, S. N. Zhu, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The Nd:YV O4 thin films with a -axis preferred orientation have been grown on Si O2 Si substrates using pulsed laser deposition. Their structural, spectroscopic ellipsometric, and emission characteristics have been systematically studied. The lower ambient oxygen pressure during deposition would lead to better crystallinity in the films. The fluorescence at 1064.8 and 1342 nm in the Nd:YV O4 films was excited with an 808 nm diode laser as pump. The results show that the highly a -axis oriented Nd:YV O4 films grown on Si substrates may have potential applications in actively integrated circuits.

Original languageEnglish
Article number096103
JournalJournal of Applied Physics
Volume99
Issue number9
DOIs
Publication statusPublished - 1 May 2006

Scopus Subject Areas

  • Physics and Astronomy(all)

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