Optical absorptions and EL2-like defects in low temperature grown molecular-beam-epitaxial GaAs

Shu Kong SO; Mau Hing CHAN; K. T. Chan

doi:10.1557/proc-378-219

Optical absorptions and EL2-like defects in low temperature grown molecular-beam-epitaxial GaAs

Shu Kong SO^*, Mau Hing CHAN, K. T. Chan

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The optical absorptions and the defect densities of GaAs grown by low temperature molecular-beam-epitaxy at growth temperatures between 200-580°C were evaluated by photothermal deflection spectroscopy. The shapes of the absorption spectra exhibit EL2-like characteristics. Defect densities were found to be in the range of 10¹⁸-10¹⁹ cm^-3. The PDS phase spectra were shown to be useful to differentiate the absorptions of the epilayer from those of the bulk.

Original language	English
Pages (from-to)	219-224
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	378
DOIs	https://doi.org/10.1557/proc-378-219
Publication status	Published - 1995
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 17 Apr 1995 → 21 Apr 1995

Scopus Subject Areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-378-219

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title = "Optical absorptions and EL2-like defects in low temperature grown molecular-beam-epitaxial GaAs",

abstract = "The optical absorptions and the defect densities of GaAs grown by low temperature molecular-beam-epitaxy at growth temperatures between 200-580°C were evaluated by photothermal deflection spectroscopy. The shapes of the absorption spectra exhibit EL2-like characteristics. Defect densities were found to be in the range of 1018-1019 cm-3. The PDS phase spectra were shown to be useful to differentiate the absorptions of the epilayer from those of the bulk.",

author = "SO, {Shu Kong} and CHAN, {Mau Hing} and Chan, {K. T.}",

year = "1995",

doi = "10.1557/proc-378-219",

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AU - SO, Shu Kong

AU - CHAN, Mau Hing

AU - Chan, K. T.

PY - 1995

Y1 - 1995

N2 - The optical absorptions and the defect densities of GaAs grown by low temperature molecular-beam-epitaxy at growth temperatures between 200-580°C were evaluated by photothermal deflection spectroscopy. The shapes of the absorption spectra exhibit EL2-like characteristics. Defect densities were found to be in the range of 1018-1019 cm-3. The PDS phase spectra were shown to be useful to differentiate the absorptions of the epilayer from those of the bulk.

AB - The optical absorptions and the defect densities of GaAs grown by low temperature molecular-beam-epitaxy at growth temperatures between 200-580°C were evaluated by photothermal deflection spectroscopy. The shapes of the absorption spectra exhibit EL2-like characteristics. Defect densities were found to be in the range of 1018-1019 cm-3. The PDS phase spectra were shown to be useful to differentiate the absorptions of the epilayer from those of the bulk.

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U2 - 10.1557/proc-378-219

DO - 10.1557/proc-378-219

M3 - Conference article

AN - SCOPUS:0029477953

SN - 0272-9172

VL - 378

SP - 219

EP - 224

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 17 April 1995 through 21 April 1995

ER -

Optical absorptions and EL2-like defects in low temperature grown molecular-beam-epitaxial GaAs

Abstract

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