Optical absorption of free-standing porous silicon films

Mau Hing CHAN; Shu Kong SO; Kok Wai CHEAH

doi:10.1063/1.361216

Optical absorption of free-standing porous silicon films

Mau Hing CHAN, Shu Kong SO^*, Kok Wai CHEAH

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

52 Citations (Scopus)

Abstract

The optical absorptions of anodically etched p⁺ and n⁺ porous silicon (PS) films were investigated by photothermal deflection spectroscopy. Si-H stretching overtones and combination bands of Si-F and Si-H were observed. The defect model in hydrogenated amorphous silicon was used to explain the Urbach edge and the subgap absorptions of PS. The dangling bond defect densities in PS were estimated.

Original language	English
Pages (from-to)	3273-3275
Number of pages	3
Journal	Journal of Applied Physics
Volume	79
Issue number	6
DOIs	https://doi.org/10.1063/1.361216
Publication status	Published - 15 Mar 1996

Scopus Subject Areas

Physics and Astronomy(all)

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10.1063/1.361216

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title = "Optical absorption of free-standing porous silicon films",

abstract = "The optical absorptions of anodically etched p+ and n+ porous silicon (PS) films were investigated by photothermal deflection spectroscopy. Si-H stretching overtones and combination bands of Si-F and Si-H were observed. The defect model in hydrogenated amorphous silicon was used to explain the Urbach edge and the subgap absorptions of PS. The dangling bond defect densities in PS were estimated.",

author = "CHAN, {Mau Hing} and SO, {Shu Kong} and CHEAH, {Kok Wai}",

note = "Support of this research by the Research Grant Council under Grant No. RGC 93-94/12 ~HKBC 107/93E! is gratefully acknowledged. ",

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language = "English",

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AU - CHAN, Mau Hing

AU - SO, Shu Kong

AU - CHEAH, Kok Wai

N1 - Support of this research by the Research Grant Council under Grant No. RGC 93-94/12 ~HKBC 107/93E! is gratefully acknowledged.

PY - 1996/3/15

Y1 - 1996/3/15

N2 - The optical absorptions of anodically etched p+ and n+ porous silicon (PS) films were investigated by photothermal deflection spectroscopy. Si-H stretching overtones and combination bands of Si-F and Si-H were observed. The defect model in hydrogenated amorphous silicon was used to explain the Urbach edge and the subgap absorptions of PS. The dangling bond defect densities in PS were estimated.

AB - The optical absorptions of anodically etched p+ and n+ porous silicon (PS) films were investigated by photothermal deflection spectroscopy. Si-H stretching overtones and combination bands of Si-F and Si-H were observed. The defect model in hydrogenated amorphous silicon was used to explain the Urbach edge and the subgap absorptions of PS. The dangling bond defect densities in PS were estimated.

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U2 - 10.1063/1.361216

DO - 10.1063/1.361216

M3 - Journal article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Optical absorption of free-standing porous silicon films

Abstract

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