The optical absorptions of anodically etched p+ and n+ porous silicon (PS) films were investigated by photothermal deflection spectroscopy. Si-H stretching overtones and combination bands of Si-F and Si-H were observed. The defect model in hydrogenated amorphous silicon was used to explain the Urbach edge and the subgap absorptions of PS. The dangling bond defect densities in PS were estimated.
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Publication status||Published - 15 Mar 1996|
Scopus Subject Areas
- Physics and Astronomy(all)