Optical absorption of free-standing porous silicon films

Mau Hing CHAN, Shu Kong SO*, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)

Abstract

The optical absorptions of anodically etched p+ and n+ porous silicon (PS) films were investigated by photothermal deflection spectroscopy. Si-H stretching overtones and combination bands of Si-F and Si-H were observed. The defect model in hydrogenated amorphous silicon was used to explain the Urbach edge and the subgap absorptions of PS. The dangling bond defect densities in PS were estimated.

Original languageEnglish
Pages (from-to)3273-3275
Number of pages3
JournalJournal of Applied Physics
Volume79
Issue number6
DOIs
Publication statusPublished - 15 Mar 1996

Scopus Subject Areas

  • Physics and Astronomy(all)

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