Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n-Doped Organic Semiconductors

Huan Wei; Jing Guo; Heng Liu; Tong Wu; Ping An Chen; Chuanding Dong; Shu Jen Wang; Stefan Schumacher; Yugang Bai; Ting Lei; Suhao Wang; Yuanyuan Hu

doi:10.1002/aelm.202400767

Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n-Doped Organic Semiconductors

Huan Wei
, Jing Guo
, Heng Liu
, Tong Wu
, Ping An Chen
, Chuanding Dong
, Shu Jen Wang
, Stefan Schumacher
, Yugang Bai
, Ting Lei
, Suhao Wang^*
, Yuanyuan Hu^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Thermal stability is crucial for doped organic semiconductors (OSCs) and their applications in organic thermoelectric (OTE) devices. However, the capacity of n-dopants to produce thermally stable n-doped OSC films has not been thoroughly explored, with few reports of high thermal stability. Here, a novel n-dopant, phosphazenium tetrafluoroborate (P₂BF₄) is introduced, which effectively induces n-doping in N2200, P(PzDPP-CT2) and several other commonly used OSCs. Remarkably, the electrical conductivity of P₂BF₄-doped OSC films remains almost unchanged even after heating at temperatures > 150 °C for 24 h, far superior to the films doped with benchmark N-DMBI. The exceptional thermal stability observed in P₂BF₄-doped P(PzDPP-CT2) films allows for stable operation of the corresponding organic thermoelectric devices at 150 °C for 16 h, a milestone not previously achieved. This study offers valuable insights into the development of n-dopants capable of producing OSCs with outstanding thermal stability, paving the way for the practical realization of OTE devices with enhanced operation stability.

Original language	English
Article number	2400767
Number of pages	9
Journal	Advanced Electronic Materials
Volume	12
Issue number	6
Early online date	23 Dec 2024
DOIs	https://doi.org/10.1002/aelm.202400767
Publication status	Published - 23 Mar 2026
Event	E‐MRS 2024 Symposium T: Doping in Organic Semiconductors: Fundamentals, Materials and Applications - Strasbourg Convention Centre, Strasbourg, France Duration: 27 May 2024 → 31 May 2024 https://advanced.onlinelibrary.wiley.com/toc/2199160x/2026/12/6 https://www.european-mrs.com/sites/default/files/symposium/pdf/sympo_t_-_program.pdf https://www.european-mrs.com/doping-organic-semiconductors-fundamentals-materials-and-applications-emrs

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User-Defined Keywords

doping performance
n-dopants
organic semiconductors
thermal stability
thermoelectric (TE) devices

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10.1002/aelm.202400767

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@article{55b4ae9100324070817d3465b392c9bd,

title = "Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n-Doped Organic Semiconductors",

abstract = "Thermal stability is crucial for doped organic semiconductors (OSCs) and their applications in organic thermoelectric (OTE) devices. However, the capacity of n-dopants to produce thermally stable n-doped OSC films has not been thoroughly explored, with few reports of high thermal stability. Here, a novel n-dopant, phosphazenium tetrafluoroborate (P2BF4) is introduced, which effectively induces n-doping in N2200, P(PzDPP-CT2) and several other commonly used OSCs. Remarkably, the electrical conductivity of P2BF4-doped OSC films remains almost unchanged even after heating at temperatures > 150 °C for 24 h, far superior to the films doped with benchmark N-DMBI. The exceptional thermal stability observed in P2BF4-doped P(PzDPP-CT2) films allows for stable operation of the corresponding organic thermoelectric devices at 150 °C for 16 h, a milestone not previously achieved. This study offers valuable insights into the development of n-dopants capable of producing OSCs with outstanding thermal stability, paving the way for the practical realization of OTE devices with enhanced operation stability.",

keywords = "doping performance, n-dopants, organic semiconductors, thermal stability, thermoelectric (TE) devices",

author = "Huan Wei and Jing Guo and Heng Liu and Tong Wu and Chen, \{Ping An\} and Chuanding Dong and Wang, \{Shu Jen\} and Stefan Schumacher and Yugang Bai and Ting Lei and Suhao Wang and Yuanyuan Hu",

note = "The authors thank the Center for Analysis and Testing of Hunan University for providing the AFM. The authors acknowledge Prof. Huajie Chen at Xiangtan University for providing the N2200. Y.H. thanks the National Key Research and Development Program (2022YFB3603802), the National Natural Science Foundation of China (62222403; 62074054; U21A20497), the Natural Science Foundation of Hunan Province (2022JJ10019), and the Shenzhen Science and Technology Innovation Commission (RCYX20200714114537036) for ﬁnancial support. S.W. gratefully acknowledges funding support from Agence Nationale de la Recherche (ANR-23- CPJ1-0047-01) and Universit{\'e} du Littoral C{\^o}te d{\textquoteright}Opale (ULCO). Publisher Copyright: {\textcopyright} 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.; E‐MRS 2024 Symposium T: Doping in Organic Semiconductors: Fundamentals, Materials and Applications ; Conference date: 27-05-2024 Through 31-05-2024",

year = "2026",

month = mar,

day = "23",

doi = "10.1002/aelm.202400767",

language = "English",

volume = "12",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

publisher = "Wiley-VCH Verlag",

number = "6",

url = "https://advanced.onlinelibrary.wiley.com/toc/2199160x/2026/12/6, https://www.european-mrs.com/sites/default/files/symposium/pdf/sympo\_t\_-\_program.pdf, https://www.european-mrs.com/doping-organic-semiconductors-fundamentals-materials-and-applications-emrs",

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TY - JOUR

T1 - Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n-Doped Organic Semiconductors

AU - Wei, Huan

AU - Guo, Jing

AU - Liu, Heng

AU - Wu, Tong

AU - Chen, Ping An

AU - Dong, Chuanding

AU - Wang, Shu Jen

AU - Schumacher, Stefan

AU - Bai, Yugang

AU - Lei, Ting

AU - Wang, Suhao

AU - Hu, Yuanyuan

N1 - The authors thank the Center for Analysis and Testing of Hunan University for providing the AFM. The authors acknowledge Prof. Huajie Chen at Xiangtan University for providing the N2200. Y.H. thanks the National Key Research and Development Program (2022YFB3603802), the National Natural Science Foundation of China (62222403; 62074054; U21A20497), the Natural Science Foundation of Hunan Province (2022JJ10019), and the Shenzhen Science and Technology Innovation Commission (RCYX20200714114537036) for ﬁnancial support. S.W. gratefully acknowledges funding support from Agence Nationale de la Recherche (ANR-23- CPJ1-0047-01) and Université du Littoral Côte d’Opale (ULCO). Publisher Copyright: © 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.

PY - 2026/3/23

Y1 - 2026/3/23

N2 - Thermal stability is crucial for doped organic semiconductors (OSCs) and their applications in organic thermoelectric (OTE) devices. However, the capacity of n-dopants to produce thermally stable n-doped OSC films has not been thoroughly explored, with few reports of high thermal stability. Here, a novel n-dopant, phosphazenium tetrafluoroborate (P2BF4) is introduced, which effectively induces n-doping in N2200, P(PzDPP-CT2) and several other commonly used OSCs. Remarkably, the electrical conductivity of P2BF4-doped OSC films remains almost unchanged even after heating at temperatures > 150 °C for 24 h, far superior to the films doped with benchmark N-DMBI. The exceptional thermal stability observed in P2BF4-doped P(PzDPP-CT2) films allows for stable operation of the corresponding organic thermoelectric devices at 150 °C for 16 h, a milestone not previously achieved. This study offers valuable insights into the development of n-dopants capable of producing OSCs with outstanding thermal stability, paving the way for the practical realization of OTE devices with enhanced operation stability.

AB - Thermal stability is crucial for doped organic semiconductors (OSCs) and their applications in organic thermoelectric (OTE) devices. However, the capacity of n-dopants to produce thermally stable n-doped OSC films has not been thoroughly explored, with few reports of high thermal stability. Here, a novel n-dopant, phosphazenium tetrafluoroborate (P2BF4) is introduced, which effectively induces n-doping in N2200, P(PzDPP-CT2) and several other commonly used OSCs. Remarkably, the electrical conductivity of P2BF4-doped OSC films remains almost unchanged even after heating at temperatures > 150 °C for 24 h, far superior to the films doped with benchmark N-DMBI. The exceptional thermal stability observed in P2BF4-doped P(PzDPP-CT2) films allows for stable operation of the corresponding organic thermoelectric devices at 150 °C for 16 h, a milestone not previously achieved. This study offers valuable insights into the development of n-dopants capable of producing OSCs with outstanding thermal stability, paving the way for the practical realization of OTE devices with enhanced operation stability.

KW - doping performance

KW - n-dopants

KW - organic semiconductors

KW - thermal stability

KW - thermoelectric (TE) devices

UR - https://www.scopus.com/pages/publications/85212853298

UR - https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202400767

U2 - 10.1002/aelm.202400767

DO - 10.1002/aelm.202400767

M3 - Conference article

AN - SCOPUS:85212853298

SN - 2199-160X

VL - 12

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 6

M1 - 2400767

T2 - E‐MRS 2024 Symposium T: Doping in Organic Semiconductors: Fundamentals, Materials and Applications

Y2 - 27 May 2024 through 31 May 2024

ER -

Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n-Doped Organic Semiconductors

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