TY - JOUR
T1 - Novel Phosphazenium Tetrafluoroborate Dopant Enables Efficient and Thermally Stable n-Doped Organic Semiconductors
AU - Wei, Huan
AU - Guo, Jing
AU - Liu, Heng
AU - Wu, Tong
AU - Chen, Ping An
AU - Dong, Chuanding
AU - Wang, Shu Jen
AU - Schumacher, Stefan
AU - Bai, Yugang
AU - Lei, Ting
AU - Wang, Suhao
AU - Hu, Yuanyuan
N1 - The authors thank the Center for Analysis and Testing of Hunan University for providing the AFM. The authors acknowledge Prof. Huajie Chen at Xiangtan University for providing the N2200. Y.H. thanks the National Key Research and Development Program (2022YFB3603802), the National Natural Science Foundation of China (62222403; 62074054; U21A20497), the Natural Science Foundation of Hunan Province (2022JJ10019), and the Shenzhen Science and Technology Innovation Commission (RCYX20200714114537036) for financial support. S.W. gratefully acknowledges funding support from Agence Nationale de la Recherche (ANR-23- CPJ1-0047-01) and Université du Littoral Côte d’Opale (ULCO).
Publisher Copyright:
© 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.
PY - 2024/12/23
Y1 - 2024/12/23
N2 - Thermal stability is crucial for doped organic semiconductors (OSCs) and their applications in organic thermoelectric (OTE) devices. However, the capacity of n-dopants to produce thermally stable n-doped OSC films has not been thoroughly explored, with few reports of high thermal stability. Here, a novel n-dopant, phosphazenium tetrafluoroborate (P2BF4) is introduced, which effectively induces n-doping in N2200, P(PzDPP-CT2) and several other commonly used OSCs. Remarkably, the electrical conductivity of P2BF4-doped OSC films remains almost unchanged even after heating at temperatures > 150 °C for 24 h, far superior to the films doped with benchmark N-DMBI. The exceptional thermal stability observed in P2BF4-doped P(PzDPP-CT2) films allows for stable operation of the corresponding organic thermoelectric devices at 150 °C for 16 h, a milestone not previously achieved. This study offers valuable insights into the development of n-dopants capable of producing OSCs with outstanding thermal stability, paving the way for the practical realization of OTE devices with enhanced operation stability.
AB - Thermal stability is crucial for doped organic semiconductors (OSCs) and their applications in organic thermoelectric (OTE) devices. However, the capacity of n-dopants to produce thermally stable n-doped OSC films has not been thoroughly explored, with few reports of high thermal stability. Here, a novel n-dopant, phosphazenium tetrafluoroborate (P2BF4) is introduced, which effectively induces n-doping in N2200, P(PzDPP-CT2) and several other commonly used OSCs. Remarkably, the electrical conductivity of P2BF4-doped OSC films remains almost unchanged even after heating at temperatures > 150 °C for 24 h, far superior to the films doped with benchmark N-DMBI. The exceptional thermal stability observed in P2BF4-doped P(PzDPP-CT2) films allows for stable operation of the corresponding organic thermoelectric devices at 150 °C for 16 h, a milestone not previously achieved. This study offers valuable insights into the development of n-dopants capable of producing OSCs with outstanding thermal stability, paving the way for the practical realization of OTE devices with enhanced operation stability.
KW - doping performance
KW - n-dopants
KW - organic semiconductors
KW - thermal stability
KW - thermoelectric (TE) devices
UR - http://www.scopus.com/inward/record.url?scp=85212853298&partnerID=8YFLogxK
UR - https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202400767
U2 - 10.1002/aelm.202400767
DO - 10.1002/aelm.202400767
M3 - Journal article
AN - SCOPUS:85212853298
SN - 2199-160X
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
M1 - 2400767
ER -
