Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

Ji Zhang; Kai Zhang; Weifeng Zhang; Zupan Mao; Ricky M S WONG; Gui Yu

doi:10.1039/c5tc01907a

Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

Ji Zhang
, Kai Zhang
, Weifeng Zhang
, Zupan Mao
, Ricky M S WONG^*
, Gui Yu

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Journal article › peer-review

11 Citations (Scopus)

Abstract

Novel benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy-side chains were synthesized and characterized. Organic field-effect transistors (OFETs) based on these compounds were fabricated and characterized. Thin film FETs based on BDTT-4 with shortest side-chains display a high performance with a carrier mobility of up to 2.6 cm² V^-1 s^-1 and a current on/off ratio exceeding 10⁸ in N₂, which is one of the highest values for acenedi(thieno)thiophene-based OFETs so far.

Original language	English
Pages (from-to)	10892-10897
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	41
DOIs	https://doi.org/10.1039/c5tc01907a
Publication status	Published - 30 Sept 2015

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title = "Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors",

abstract = "Novel benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy-side chains were synthesized and characterized. Organic field-effect transistors (OFETs) based on these compounds were fabricated and characterized. Thin film FETs based on BDTT-4 with shortest side-chains display a high performance with a carrier mobility of up to 2.6 cm2 V-1 s-1 and a current on/off ratio exceeding 108 in N2, which is one of the highest values for acenedi(thieno)thiophene-based OFETs so far.",

author = "Ji Zhang and Kai Zhang and Weifeng Zhang and Zupan Mao and WONG, \{Ricky M S\} and Gui Yu",

note = "This research was financially supported by the National Natural Science Foundation of China (21021091 and 21474116), the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB12030100), and the Major State Basic Research Development Program (2011CB808403). This work was also supported by GRF (HKBU 203212), Hong Kong Research Grant Council, Strategic Development Fund (SDF13-0531-A02) of Hong Kong Baptist University and Institute of Molecular Functional Materials which was supported by a grant from the University Grants Committee, Areas of Excellence Scheme (AoE/P-03/08). ",

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doi = "10.1039/c5tc01907a",

language = "English",

volume = "3",

pages = "10892--10897",

journal = "Journal of Materials Chemistry C",

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TY - JOUR

T1 - Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

AU - Zhang, Ji

AU - Zhang, Kai

AU - Zhang, Weifeng

AU - Mao, Zupan

AU - WONG, Ricky M S

AU - Yu, Gui

N1 - This research was financially supported by the National Natural Science Foundation of China (21021091 and 21474116), the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB12030100), and the Major State Basic Research Development Program (2011CB808403). This work was also supported by GRF (HKBU 203212), Hong Kong Research Grant Council, Strategic Development Fund (SDF13-0531-A02) of Hong Kong Baptist University and Institute of Molecular Functional Materials which was supported by a grant from the University Grants Committee, Areas of Excellence Scheme (AoE/P-03/08).

PY - 2015/9/30

Y1 - 2015/9/30

N2 - Novel benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy-side chains were synthesized and characterized. Organic field-effect transistors (OFETs) based on these compounds were fabricated and characterized. Thin film FETs based on BDTT-4 with shortest side-chains display a high performance with a carrier mobility of up to 2.6 cm2 V-1 s-1 and a current on/off ratio exceeding 108 in N2, which is one of the highest values for acenedi(thieno)thiophene-based OFETs so far.

AB - Novel benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy-side chains were synthesized and characterized. Organic field-effect transistors (OFETs) based on these compounds were fabricated and characterized. Thin film FETs based on BDTT-4 with shortest side-chains display a high performance with a carrier mobility of up to 2.6 cm2 V-1 s-1 and a current on/off ratio exceeding 108 in N2, which is one of the highest values for acenedi(thieno)thiophene-based OFETs so far.

UR - https://www.scopus.com/pages/publications/84944748266

U2 - 10.1039/c5tc01907a

DO - 10.1039/c5tc01907a

M3 - Journal article

AN - SCOPUS:84944748266

SN - 2050-7526

VL - 3

SP - 10892

EP - 10897

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 41

ER -

Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

Abstract

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