Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

Ji Zhang; Kai Zhang; Weifeng Zhang; Zupan Mao; Ricky M S WONG; Gui Yu

doi:10.1039/c5tc01907a

Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

Ji Zhang, Kai Zhang, Weifeng Zhang, Zupan Mao, Ricky M S WONG^*, Gui Yu

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Journal article › peer-review

7 Citations (Scopus)

Abstract

Novel benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy-side chains were synthesized and characterized. Organic field-effect transistors (OFETs) based on these compounds were fabricated and characterized. Thin film FETs based on BDTT-4 with shortest side-chains display a high performance with a carrier mobility of up to 2.6 cm² V^-1 s^-1 and a current on/off ratio exceeding 10⁸ in N₂, which is one of the highest values for acenedi(thieno)thiophene-based OFETs so far.

Original language	English
Pages (from-to)	10892-10897
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	3
Issue number	41
DOIs	https://doi.org/10.1039/c5tc01907a
Publication status	Published - 30 Sept 2015

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Chemistry(all)
Materials Chemistry

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title = "Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors",

abstract = "Novel benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy-side chains were synthesized and characterized. Organic field-effect transistors (OFETs) based on these compounds were fabricated and characterized. Thin film FETs based on BDTT-4 with shortest side-chains display a high performance with a carrier mobility of up to 2.6 cm2 V-1 s-1 and a current on/off ratio exceeding 108 in N2, which is one of the highest values for acenedi(thieno)thiophene-based OFETs so far.",

author = "Ji Zhang and Kai Zhang and Weifeng Zhang and Zupan Mao and WONG, {Ricky M S} and Gui Yu",

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T1 - Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

AU - Zhang, Ji

AU - Zhang, Kai

AU - Zhang, Weifeng

AU - Mao, Zupan

AU - WONG, Ricky M S

AU - Yu, Gui

PY - 2015/9/30

Y1 - 2015/9/30

N2 - Novel benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy-side chains were synthesized and characterized. Organic field-effect transistors (OFETs) based on these compounds were fabricated and characterized. Thin film FETs based on BDTT-4 with shortest side-chains display a high performance with a carrier mobility of up to 2.6 cm2 V-1 s-1 and a current on/off ratio exceeding 108 in N2, which is one of the highest values for acenedi(thieno)thiophene-based OFETs so far.

AB - Novel benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy-side chains were synthesized and characterized. Organic field-effect transistors (OFETs) based on these compounds were fabricated and characterized. Thin film FETs based on BDTT-4 with shortest side-chains display a high performance with a carrier mobility of up to 2.6 cm2 V-1 s-1 and a current on/off ratio exceeding 108 in N2, which is one of the highest values for acenedi(thieno)thiophene-based OFETs so far.

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M3 - Journal article

AN - SCOPUS:84944748266

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SP - 10892

EP - 10897

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 41

ER -

Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

Abstract

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