@article{132807d19f6c41d28022f10e5322c6fd,
title = "Nitrogen doped-ZnO/n-GaN heterojunctions",
abstract = "Nitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples.",
author = "Chen, {Xin Yi} and Fang Fang and Ng, {Alan M.C.} and Djuri{\v s}i{\v c}, {Aleksandra B.} and CHEAH, {Kok Wai} and Ling, {Chi Chung} and Chan, {Wai Kin} and Fong, {Patrick W.K.} and Lui, {Hsian Fei} and Charles Surya",
note = "Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Small Project Grant, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank MCPF, Hong Kong University of Science and Technology for SIMS and AES measurements. The authors would like to thank Department of Physics, Chinese University of Hong Kong and Materials Preparation and Characterization Facility, the Hong Kong University of Science and Technology for EELS measurements.",
year = "2011",
month = apr,
day = "15",
doi = "10.1063/1.3575178",
language = "English",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "8",
}