Nitrogen doped-ZnO/n-GaN heterojunctions

Xin Yi Chen; Fang Fang; Alan M.C. Ng; Aleksandra B. Djurišič; Kok Wai CHEAH; Chi Chung Ling; Wai Kin Chan; Patrick W.K. Fong; Hsian Fei Lui; Charles Surya

doi:10.1063/1.3575178

Nitrogen doped-ZnO/n-GaN heterojunctions

Xin Yi Chen, Fang Fang, Alan M.C. Ng, Aleksandra B. Djurišič, Kok Wai CHEAH, Chi Chung Ling, Wai Kin Chan, Patrick W.K. Fong, Hsian Fei Lui, Charles Surya

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

5 Citations (Scopus)

Abstract

Nitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples.

Original language	English
Article number	084330
Journal	Journal of Applied Physics
Volume	109
Issue number	8
DOIs	https://doi.org/10.1063/1.3575178
Publication status	Published - 15 Apr 2011

Scopus Subject Areas

Physics and Astronomy(all)

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10.1063/1.3575178

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@article{132807d19f6c41d28022f10e5322c6fd,

title = "Nitrogen doped-ZnO/n-GaN heterojunctions",

abstract = "Nitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples.",

author = "Chen, {Xin Yi} and Fang Fang and Ng, {Alan M.C.} and Djuri{\v s}i{\v c}, {Aleksandra B.} and CHEAH, {Kok Wai} and Ling, {Chi Chung} and Chan, {Wai Kin} and Fong, {Patrick W.K.} and Lui, {Hsian Fei} and Charles Surya",

note = "Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Small Project Grant, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank MCPF, Hong Kong University of Science and Technology for SIMS and AES measurements. The authors would like to thank Department of Physics, Chinese University of Hong Kong and Materials Preparation and Characterization Facility, the Hong Kong University of Science and Technology for EELS measurements.",

year = "2011",

month = apr,

day = "15",

doi = "10.1063/1.3575178",

language = "English",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Nitrogen doped-ZnO/n-GaN heterojunctions

AU - Chen, Xin Yi

AU - Fang, Fang

AU - Ng, Alan M.C.

AU - Djurišič, Aleksandra B.

AU - CHEAH, Kok Wai

AU - Ling, Chi Chung

AU - Chan, Wai Kin

AU - Fong, Patrick W.K.

AU - Lui, Hsian Fei

AU - Surya, Charles

N1 - Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Small Project Grant, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank MCPF, Hong Kong University of Science and Technology for SIMS and AES measurements. The authors would like to thank Department of Physics, Chinese University of Hong Kong and Materials Preparation and Characterization Facility, the Hong Kong University of Science and Technology for EELS measurements.

PY - 2011/4/15

Y1 - 2011/4/15

N2 - Nitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples.

AB - Nitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples.

UR - http://www.scopus.com/inward/record.url?scp=79955721210&partnerID=8YFLogxK

U2 - 10.1063/1.3575178

DO - 10.1063/1.3575178

M3 - Journal article

AN - SCOPUS:79955721210

SN - 0021-8979

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 084330

ER -

Nitrogen doped-ZnO/n-GaN heterojunctions

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