TY - JOUR
T1 - NIR to Visible Light Upconversion Devices Comprising an NIR Charge Generation Layer and a Perovskite Emitter
AU - Li, Ning
AU - Lau, Ying Suet
AU - Xiao, Zuo
AU - Ding, Liming
AU - ZHU, Fu Rong
N1 - Funding Information:
This work was financially supported by the Research Grants Council of Hong Kong Special Administrative Region, China, General Research Fund (GRF/12302817) and Hong Kong Baptist University Interinstitutional Collaborative Research Scheme (RC-ICRS/15-16/04). L.D. thanks the National Natural Science Foundation of China (U1401244, 21572041, 51503050, 51773045, 21772030, and 21704021), the National Key Research and Development Program of China (2017YFA0206600), and the Youth Association for Promoting Innovation (CAS) for financial support.
PY - 2018/12/17
Y1 - 2018/12/17
N2 - Near-infrared (NIR) to visible light upconversion is of significant importance in many applications, including thermal imaging, bioimaging, night vision, and wellness monitoring. Here, the effort to develop a high-performing NIR to saturated green light upconversion device comprising a front solution-processable organic bulk heterojunction NIR charge generation layer (CGL) and an upper CsPbBr3 perovskite light-emitting diode (LED) unit is reported. The NIR CGL, based on a blend of the NIR-sensitive donor polymer and a nonfullerene acceptor, enables an efficient hole injection in the CsPbBr3 LED in the presence of the NIR light and also serves as an optical outcoupling layer to enhance the visible light emission by the CsPbBr3 LED. The CsPbBr3-based perovskite LED has a narrow emission spectrum with a peak wavelength of 520 nm, corresponding to the wavelengths near the peak response of the human eye, and has the advantage in imaging applications. Based on the upconversion process, a pixel-less NIR to visible light imaging device is demonstrated, which can be operated at a low voltage of 3 V. The results are very encouraging, revealing a high-performing solution-processable upconversion device for application in NIR light imaging.
AB - Near-infrared (NIR) to visible light upconversion is of significant importance in many applications, including thermal imaging, bioimaging, night vision, and wellness monitoring. Here, the effort to develop a high-performing NIR to saturated green light upconversion device comprising a front solution-processable organic bulk heterojunction NIR charge generation layer (CGL) and an upper CsPbBr3 perovskite light-emitting diode (LED) unit is reported. The NIR CGL, based on a blend of the NIR-sensitive donor polymer and a nonfullerene acceptor, enables an efficient hole injection in the CsPbBr3 LED in the presence of the NIR light and also serves as an optical outcoupling layer to enhance the visible light emission by the CsPbBr3 LED. The CsPbBr3-based perovskite LED has a narrow emission spectrum with a peak wavelength of 520 nm, corresponding to the wavelengths near the peak response of the human eye, and has the advantage in imaging applications. Based on the upconversion process, a pixel-less NIR to visible light imaging device is demonstrated, which can be operated at a low voltage of 3 V. The results are very encouraging, revealing a high-performing solution-processable upconversion device for application in NIR light imaging.
KW - NIR imaging
KW - NIR to visible light upconversion
KW - nonfullerene acceptor
KW - perovskite light-emitting diode
UR - http://www.scopus.com/inward/record.url?scp=85055511626&partnerID=8YFLogxK
U2 - 10.1002/adom.201801084
DO - 10.1002/adom.201801084
M3 - Journal article
AN - SCOPUS:85055511626
SN - 2195-1071
VL - 6
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 24
M1 - 1801084
ER -