NiOZnO light emitting diodes by solution-based growth

Y. Y. Xi; Y. F. Hsu; A. B. Djurišić; A. M.C. Ng; W. K. Chan; Hoi Lam TAM; Kok Wai CHEAH

doi:10.1063/1.2898505

NiOZnO light emitting diodes by solution-based growth

Y. Y. Xi, Y. F. Hsu, A. B. Djurišić, A. M.C. Ng, W. K. Chan, Hoi Lam TAM, Kok Wai CHEAH

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

125 Citations (Scopus)

Abstract

Heterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra.

Original language	English
Article number	113505
Journal	Applied Physics Letters
Volume	92
Issue number	11
DOIs	https://doi.org/10.1063/1.2898505
Publication status	Published - 2008

Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2898505

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@article{a9cfc31d79504c82b9fdf0f043246a25,

title = "NiOZnO light emitting diodes by solution-based growth",

abstract = "Heterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra.",

author = "Xi, {Y. Y.} and Hsu, {Y. F.} and Djuri{\v s}i{\'c}, {A. B.} and Ng, {A. M.C.} and Chan, {W. K.} and TAM, {Hoi Lam} and CHEAH, {Kok Wai}",

note = "Funding Information: This work was supported by the Research Grants Council of The Hong Kong Special Administrative Region, China (Project Nos. HKU 7021/03P, HKU 7019/04P, and 7010/05P). Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and Outstanding Young Researcher Award (administrated by The University of Hong Kong), and Hung Hing Ying Physical Sciences research Fund are also acknowledged.",

year = "2008",

doi = "10.1063/1.2898505",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - NiOZnO light emitting diodes by solution-based growth

AU - Xi, Y. Y.

AU - Hsu, Y. F.

AU - Djurišić, A. B.

AU - Ng, A. M.C.

AU - Chan, W. K.

AU - TAM, Hoi Lam

AU - CHEAH, Kok Wai

N1 - Funding Information: This work was supported by the Research Grants Council of The Hong Kong Special Administrative Region, China (Project Nos. HKU 7021/03P, HKU 7019/04P, and 7010/05P). Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and Outstanding Young Researcher Award (administrated by The University of Hong Kong), and Hung Hing Ying Physical Sciences research Fund are also acknowledged.

PY - 2008

Y1 - 2008

N2 - Heterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra.

AB - Heterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra.

UR - http://www.scopus.com/inward/record.url?scp=41049102576&partnerID=8YFLogxK

U2 - 10.1063/1.2898505

DO - 10.1063/1.2898505

M3 - Journal article

AN - SCOPUS:41049102576

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 113505

ER -

NiOZnO light emitting diodes by solution-based growth

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