NiOZnO light emitting diodes by solution-based growth

Y. Y. Xi, Y. F. Hsu, A. B. Djurišić, A. M.C. Ng, W. K. Chan, Hoi Lam TAM, Kok Wai CHEAH

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113 Citations (Scopus)

Abstract

Heterojunction NiOZnO light emitting diodes have been fabricated using low temperature solution-based growth methods. While negligible light emission has been obtained for the as-grown NiO film, devices with annealed NiO film exhibit room-temperature electroluminescence (EL), which was attributed to the detrimental effects of nickel oxide hydroxide in as-grown NiO layers. The device performance can be further modified by insertion of the organic layers between NiO and ZnO and the EL spectra exhibited dependence on the bias voltage. For higher bias voltages, strong UV-violet emission peak can be obtained in spite of the dominance of defect emission in the photoluminescence spectra.

Original languageEnglish
Article number113505
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
Publication statusPublished - 2008

Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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