New host containing bipolar carrier transport moiety for high-efficiency electrophosphorescence at low voltages

Zhi Qiang Gao; Meiming Luo; Xiao Hua Sun; Hoi Lam TAM; Ricky M S WONG; Bao Xiu Mi; Ping Fang Xia; Kok Wai CHEAH; Chin Hsin Chen

doi:10.1002/adma.200702877

New host containing bipolar carrier transport moiety for high-efficiency electrophosphorescence at low voltages

Zhi Qiang Gao, Meiming Luo, Xiao Hua Sun, Hoi Lam TAM, Ricky M S WONG, Bao Xiu Mi, Ping Fang Xia, Kok Wai CHEAH, Chin Hsin Chen

Research output: Contribution to journal › Journal article › peer-review

140 Citations (Scopus)

Abstract

A new host containing bipolar carrier transport moiety for high-efficiency electro Phosphorescent Organic Light Emitting Devices (PHOLEDs) at low voltages was reported. The OLEDs were fabricated using a vacuum thermal evaporation chamber with a base pressure of 1.33 × 10^-4 Pa. Two shadow masks were used to define the deposition areas for the organic and metal cathodes. Current-density-voltage-luminance properties and EL spectra of the device were measured. The ionization potential of the BUPH1 thin film was measured by UV photoemission spectroscopy. It was observed that the charge traps on the emitters and the hole-injection barrier between the hole transporting layer and the emitting layer are effectively reduced, due to narrow gap and desirable HOMO level of BUPH1. The important concept of integrating both hole-transporting and electron -transporting moieties into a host molecule has proven to be successful in PHOLED devices.

Original language	English
Pages (from-to)	688-692
Number of pages	5
Journal	Advanced Materials
Volume	21
Issue number	6
DOIs	https://doi.org/10.1002/adma.200702877
Publication status	Published - 9 Feb 2009

Scopus Subject Areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.200702877

Cite this

@article{047ed44a54a04595bb6b64447ca4d383,

title = "New host containing bipolar carrier transport moiety for high-efficiency electrophosphorescence at low voltages",

abstract = "A new host containing bipolar carrier transport moiety for high-efficiency electro Phosphorescent Organic Light Emitting Devices (PHOLEDs) at low voltages was reported. The OLEDs were fabricated using a vacuum thermal evaporation chamber with a base pressure of 1.33 × 10-4 Pa. Two shadow masks were used to define the deposition areas for the organic and metal cathodes. Current-density-voltage-luminance properties and EL spectra of the device were measured. The ionization potential of the BUPH1 thin film was measured by UV photoemission spectroscopy. It was observed that the charge traps on the emitters and the hole-injection barrier between the hole transporting layer and the emitting layer are effectively reduced, due to narrow gap and desirable HOMO level of BUPH1. The important concept of integrating both hole-transporting and electron -transporting moieties into a host molecule has proven to be successful in PHOLED devices.",

author = "Gao, {Zhi Qiang} and Meiming Luo and Sun, {Xiao Hua} and TAM, {Hoi Lam} and WONG, {Ricky M S} and Mi, {Bao Xiu} and Xia, {Ping Fang} and CHEAH, {Kok Wai} and Chen, {Chin Hsin}",

year = "2009",

month = feb,

day = "9",

doi = "10.1002/adma.200702877",

language = "English",

volume = "21",

pages = "688--692",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "6",

}

TY - JOUR

T1 - New host containing bipolar carrier transport moiety for high-efficiency electrophosphorescence at low voltages

AU - Gao, Zhi Qiang

AU - Luo, Meiming

AU - Sun, Xiao Hua

AU - TAM, Hoi Lam

AU - WONG, Ricky M S

AU - Mi, Bao Xiu

AU - Xia, Ping Fang

AU - CHEAH, Kok Wai

AU - Chen, Chin Hsin

PY - 2009/2/9

Y1 - 2009/2/9

N2 - A new host containing bipolar carrier transport moiety for high-efficiency electro Phosphorescent Organic Light Emitting Devices (PHOLEDs) at low voltages was reported. The OLEDs were fabricated using a vacuum thermal evaporation chamber with a base pressure of 1.33 × 10-4 Pa. Two shadow masks were used to define the deposition areas for the organic and metal cathodes. Current-density-voltage-luminance properties and EL spectra of the device were measured. The ionization potential of the BUPH1 thin film was measured by UV photoemission spectroscopy. It was observed that the charge traps on the emitters and the hole-injection barrier between the hole transporting layer and the emitting layer are effectively reduced, due to narrow gap and desirable HOMO level of BUPH1. The important concept of integrating both hole-transporting and electron -transporting moieties into a host molecule has proven to be successful in PHOLED devices.

AB - A new host containing bipolar carrier transport moiety for high-efficiency electro Phosphorescent Organic Light Emitting Devices (PHOLEDs) at low voltages was reported. The OLEDs were fabricated using a vacuum thermal evaporation chamber with a base pressure of 1.33 × 10-4 Pa. Two shadow masks were used to define the deposition areas for the organic and metal cathodes. Current-density-voltage-luminance properties and EL spectra of the device were measured. The ionization potential of the BUPH1 thin film was measured by UV photoemission spectroscopy. It was observed that the charge traps on the emitters and the hole-injection barrier between the hole transporting layer and the emitting layer are effectively reduced, due to narrow gap and desirable HOMO level of BUPH1. The important concept of integrating both hole-transporting and electron -transporting moieties into a host molecule has proven to be successful in PHOLED devices.

UR - http://www.scopus.com/inward/record.url?scp=60349130422&partnerID=8YFLogxK

U2 - 10.1002/adma.200702877

DO - 10.1002/adma.200702877

M3 - Journal article

AN - SCOPUS:60349130422

SN - 0935-9648

VL - 21

SP - 688

EP - 692

JO - Advanced Materials

JF - Advanced Materials

IS - 6

ER -

New host containing bipolar carrier transport moiety for high-efficiency electrophosphorescence at low voltages

Abstract

Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this