Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors

Zhaoguang Li, Ji Zhang, Kai Zhang, Weifeng Zhang, Lei Guo, Jianyao Huang, Gui Yu*, Ricky M S WONG

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A novel series of air-stable and highly extended π-conjugated naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivatives, NBTBT-n (n = 6, 8, 10, and 12) and NBTBTF-10, was developed. The influence of various alkoxy-side groups including straight chain with different chain lengths and branched chain on the FET device performance was also investigated. There was a progressive enhancement in the NBTBT-based OFET device performance with an increase in the annealing temperature. The OFET devices based on NBTBT-10 fabricated by vacuum deposition exhibited the best performance with a hole mobility of 0.25 cm2 V-1 s-1 and an on/off ratio of 105-106 after annealing at 220 °C. In addition, fluorinated naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene, NBTBTF-10, showed good p-type transistor behaviour with a hole mobility of 0.24 cm2 V-1 s-1 and an on/off ratio of 106-107 which was achieved at a lower annealing temperature of 140 °C, suggesting the important contribution of the dipole-dipole interactions induced by the fluorine atoms in the molecular packing. As a result, the naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene framework shows promise as a useful building block to construct organic semiconductors for next-generation high performance organic electronics.

Original languageEnglish
Pages (from-to)8024-8029
Number of pages6
JournalJournal of Materials Chemistry C
Volume3
Issue number31
DOIs
Publication statusPublished - 21 Aug 2015

Scopus Subject Areas

  • Chemistry(all)
  • Materials Chemistry

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