Multiple peak photoluminescence of porous silicon

Kok Wai CHEAH*, Tommy Chan, W. L. Lee, Da Teng, W. H. Zheng, Q. M. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The photoluminescence (PL) response of porous silicon is usually in the form of a single broad peak. Recently, however, PL response with two peaks has been reported. Here we report the observation of multiple peaks in the PL spectrum of porous silicon. A simple modeling of the line shape indicates that four peaks exist within the response curve, and analysis suggests that the PL of porous silicon is derived from quantum confinement in the silicon crystallites. The line shapes can be due to either minibands within the conduction and valence bands or crystallite size variation or a combination of the two.

Original languageEnglish
Pages (from-to)3464-3466
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number25
DOIs
Publication statusPublished - 1993

Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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