Modulated infrared electroluminescence from organic light-emitting diodes

Faxin Zang*, Tze Chien Sum, Furong Zhu, Zi Ruo Hong, Xiaoyan Sun, Wen Lian Li, Cheng Hon Alfred Huan

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

6 Citations (Scopus)


Modulated infrared electroluminescence from organic light-emitting diodes (OLEDs) based on rare earth complexes (tris-dibenzoylmethanato-mono-bathophenanthroline) erbium or neodymium were fabricated. The modulations were realized by varying the device configuration and by varying an applied forward bias at room temperature. We found that the intensity of EL peak at 1.54 μm was reduced by a factor of almost 20 times as the Nd complex layer thickness in the OLEDs was increased from 1 nm to 5 nm. The intensity ratio of the 1.54 μm (Nd) to 1.06 μm (Er) decreases from 0.82 to 0.53 as the forward bias increases from 6.5 V to 18 V. The effects of the modulation of these IR emissions were also discussed.

Original languageEnglish
Pages (from-to)1522-1526
Number of pages5
JournalJournal of Lightwave Technology
Issue number11
Early online date24 Apr 2009
Publication statusPublished - 1 Jun 2009

Scopus Subject Areas

  • Atomic and Molecular Physics, and Optics

User-Defined Keywords

  • Modulated infrared electroluminescence
  • Organic light emitting devices
  • Rare-earth complexes and recombination zone


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