Model-based OPC Extension in OpenILT

Optical proximity correction (OPC) is a technique to improve the accuracy of pattern transfer from the mask to the wafer in optical lithography. Model-based OPC (MB-OPC) uses mathematical models to simulate the image formation process and adjust the mask layout accordingly. In this paper, we extend the open-source computational lithography library OpenILT to support MB-OPC. The extension provides a flexible and modular framework for implementing OPC algorithms with GPU acceleration for large-scale layouts. We demonstrate the performance and scalability of the library on different mask patterns. The experimental results show that our method can achieve more than 5 times speedup over the CPU-based MB-OPC method, while maintaining the same correction accuracy and quality. Our MB-OPC extension can provide a powerful baseline for future research on OPC.