Magnetic field effect on photocurrent in single layer organic semiconductor devices

B. K. Li*, H. T. He, W. J. Chen, M. K. Lam, L. X. Zhang, Kok Wai CHEAH, J. N. Wang

*Corresponding author for this work

Research output: Chapter in book/report/conference proceedingConference proceedingpeer-review

1 Citation (Scopus)

Abstract

We systematically studied the magnetic field effect on photocurrent (MPC) in ITO/N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB)/Al sandwich devices as a function of the excitation photon energy and the applied bias voltage. We experimentally identified that the magnetic field induced an increase of intersystem crossing rate between singlet- and triplet- excitons (ISC-X) and a decrease of triplet exciton-polaron quenching rate (TPQ), with ISC-X was a high magnetic field effect and TPQ a low magnetic field one. It was found that the band alignment and carrier transport within the device played an important role in the MPC behaviors.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages881-882
Number of pages2
DOIs
Publication statusPublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
Country/TerritoryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Scopus Subject Areas

  • Physics and Astronomy(all)

User-Defined Keywords

  • NPB
  • Organic magnetoresistance
  • Photocurrent

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