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Luminescence properties of ZnSe films grown by hot wall epitaxy
H. M. Wong
, Jian Bai Xia
, K. W. Cheah
*
*
Corresponding author for this work
Department of Physics
Research output
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peer-review
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Keyphrases
Conduction Band
100%
Photoluminescence Intensity
100%
Luminescence Properties
100%
ZnSe Films
100%
Hot Wall Epitaxy
100%
Donor-acceptor Pair
100%
Phonon Replicas
100%
Room Temperature
50%
Fourth Order
50%
Photoluminescence Properties
50%
Photoluminescence Spectra
50%
Thermal Quenching
50%
Quenching Process
50%
Activation Energy
50%
Temperature-dependent Photoluminescence
50%
Donor Bound Exciton
50%
Bound Exciton
50%
Huang-Rhys Factor
50%
Neutral Donors
50%
Donor-acceptor Pair Transitions
50%
Excitonic Transition
50%
Chemistry
Donor
100%
Hot Wall Epitaxy
100%
Photoluminescence
75%
Conduction Band
50%
Bound Exciton
50%
Phonon
50%
Ambient Reaction Temperature
25%
Reaction Activation Energy
25%
Photoluminescence Spectrum
25%
Material Science
Luminescence
100%
Photoluminescence
100%
Film
100%
Epitaxy
100%
Activation Energy
25%
Engineering
Conduction Band
100%
Luminescence Property
100%
Fourth Order
50%
Room Temperature
50%
Activation Energy
50%
Temperature Dependence
50%