Luminescence properties of ZnSe films grown by hot wall epitaxy

H. M. Wong, Jian Bai Xia, Kok Wai CHEAH*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

Abstract

The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL spectra show clear neutral donor-bound exciton peak; donor acceptor pair (DAP) peak, conduction band to acceptor (CA) peak, and their phonon replicas until fourth order. The conduction band to acceptor peak and it's phonon replicas exist until room temperature. From the ratio of PL intensities of DAP and CA peaks and their replicas, we obtain the Huang-Rhys factor S = 0.58, in agreement with other experiments for acceptor-bound exciton transitions. From the temperature dependence of PL intensities we derive the activation energy of thermal quenching process for the DAP transitions as about 7 meV.

Original languageEnglish
Pages (from-to)507-509
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume64
Issue number5
DOIs
Publication statusPublished - May 1997

Scopus Subject Areas

  • Chemistry(all)
  • Materials Science(all)

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