Luminescence properties of ZnSe films grown by hot wall epitaxy

H. M. Wong; Jian Bai Xia; K. W. Cheah

doi:10.1007/s003390050509

Luminescence properties of ZnSe films grown by hot wall epitaxy

H. M. Wong, Jian Bai Xia, K. W. Cheah^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

Abstract

The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL spectra show clear neutral donor-bound exciton peak; donor acceptor pair (DAP) peak, conduction band to acceptor (CA) peak, and their phonon replicas until fourth order. The conduction band to acceptor peak and it's phonon replicas exist until room temperature. From the ratio of PL intensities of DAP and CA peaks and their replicas, we obtain the Huang-Rhys factor S = 0.58, in agreement with other experiments for acceptor-bound exciton transitions. From the temperature dependence of PL intensities we derive the activation energy of thermal quenching process for the DAP transitions as about 7 meV.

Original language	English
Pages (from-to)	507-509
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	64
Issue number	5
DOIs	https://doi.org/10.1007/s003390050509
Publication status	Published - May 1997

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General Chemistry
General Materials Science

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title = "Luminescence properties of ZnSe films grown by hot wall epitaxy",

abstract = "The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL spectra show clear neutral donor-bound exciton peak; donor acceptor pair (DAP) peak, conduction band to acceptor (CA) peak, and their phonon replicas until fourth order. The conduction band to acceptor peak and it's phonon replicas exist until room temperature. From the ratio of PL intensities of DAP and CA peaks and their replicas, we obtain the Huang-Rhys factor S = 0.58, in agreement with other experiments for acceptor-bound exciton transitions. From the temperature dependence of PL intensities we derive the activation energy of thermal quenching process for the DAP transitions as about 7 meV.",

author = "Wong, {H. M.} and Xia, {Jian Bai} and Cheah, {K. W.}",

year = "1997",

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doi = "10.1007/s003390050509",

language = "English",

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journal = "Applied Physics A: Materials Science and Processing",

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T1 - Luminescence properties of ZnSe films grown by hot wall epitaxy

AU - Wong, H. M.

AU - Xia, Jian Bai

AU - Cheah, K. W.

PY - 1997/5

Y1 - 1997/5

N2 - The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL spectra show clear neutral donor-bound exciton peak; donor acceptor pair (DAP) peak, conduction band to acceptor (CA) peak, and their phonon replicas until fourth order. The conduction band to acceptor peak and it's phonon replicas exist until room temperature. From the ratio of PL intensities of DAP and CA peaks and their replicas, we obtain the Huang-Rhys factor S = 0.58, in agreement with other experiments for acceptor-bound exciton transitions. From the temperature dependence of PL intensities we derive the activation energy of thermal quenching process for the DAP transitions as about 7 meV.

AB - The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL spectra show clear neutral donor-bound exciton peak; donor acceptor pair (DAP) peak, conduction band to acceptor (CA) peak, and their phonon replicas until fourth order. The conduction band to acceptor peak and it's phonon replicas exist until room temperature. From the ratio of PL intensities of DAP and CA peaks and their replicas, we obtain the Huang-Rhys factor S = 0.58, in agreement with other experiments for acceptor-bound exciton transitions. From the temperature dependence of PL intensities we derive the activation energy of thermal quenching process for the DAP transitions as about 7 meV.

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DO - 10.1007/s003390050509

M3 - Journal article

AN - SCOPUS:0031141424

SN - 0947-8396

VL - 64

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EP - 509

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 5

ER -

Luminescence properties of ZnSe films grown by hot wall epitaxy

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