Luminescence centers in porous silicon

Kok Wai CHEAH*, L. C. Ho, J. B. Xia, J. Li, W. H. Zheng, W. R. Zhuang, Q. M. Wang

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

10 Citations (Scopus)

Abstract

Photoluminescence studies on porous silicon show that there are luminescence centers present in the surface states. By taking photoluminescence spectra of porous silicon with respect to temperature, a distinct peak can be observed in the temperature range 100-150 K. Both linear and nonlinear relationships were observed between excitation laser power and the photoluminescence intensity within this temperature range. In addition, there was a tendency for the photoluminescence peak to red shift at low temperature as well as at low excitation power. This is interpreted as indicating that the lower energy transition becomes dominant at low temperature and excitation power. The presence of these luminescence centers can be explained in terms of porous silicon as a mixture of silicon clusters and wires in which quantum confinement along with surface passivation would cause a mixing of Γ and X band structure between the surface states and the bulk. This mixing would allow the formation of luminescence centers.

Original languageEnglish
Pages (from-to)601-606
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume60
Issue number6
DOIs
Publication statusPublished - Jun 1995

Scopus Subject Areas

  • Chemistry(all)
  • Materials Science(all)

User-Defined Keywords

  • 81.40
  • 82.40.Tc

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