Low-temperature-processed inorganic gate dielectrics for plastic-substrate-based organic field-effect transistors

H. S. Tan*, T. Cahyadi, Z. B. Wang, A. Lohani, Z. Tsakadze, S. Zhang, Furong Zhu, S. G. Mhaisalkar

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

17 Citations (Scopus)

Abstract

Low-temperature-processed inorganic gate dielectrics were employed here to yield high-performance organic field-effect transistors (FETs) on flexible plastic substrates. SiN dielectrics deposited at room temperature and SiN/sol-gel silica dielectric bilayer processed below 100 °C were demonstrated to be viable gate dielectric materials, with the latter yielding effective field-effect mobilities of ∼1 cm2/V ·s at operating voltages of under -5 V with an on-off current ratio in the range of 105. The enhancement in device performance was attributed to an improved semiconductor-dielectric interface and a larger grain size of the pentacene deposited on the bilayer dielectrics. The flexibility of FETs fabricated on polyester substrates was also demonstrated with insignificant changes in device performance upon subjecting the devices to strains of 2.27%.

Original languageEnglish
Pages (from-to)698-700
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number7
DOIs
Publication statusPublished - Jul 2008

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

User-Defined Keywords

  • Dielectric
  • Flexibility
  • Organic field-effect transistors (OFETs)
  • SiN∞ dielectric
  • Sol-gel (SG) dielectric

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