Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

Zhenghua An; Ricky K.Y. Fu; Weili Li; Peng Chen; Paul K. Chu; K. F. Li; L. Luo; Hoi Lam TAM; Kok Wai CHEAH; Chenglu Lin

doi:10.1063/1.1759784

Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

Zhenghua An, Ricky K.Y. Fu, Weili Li, Peng Chen, Paul K. Chu^*, K. F. Li, L. Luo, Hoi Lam TAM, Kok Wai CHEAH, Chenglu Lin

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

6 Citations (Scopus)

Abstract

The low-temperature photoluminescence (PL) in the infrared band around the band gap of hydrogen beam-line and plasma implanted silicon and porous silicon was analyzed. The plasma immersion ion implantation (PIII) samples exhibited at least more than one peak at 1.17 eV and a wide photoluminescence band, while beam-line implanted samples exhibited a broad photoluminescence band below the band gap. It was observed that the peak at 1.17 eV was originated from nonphonon emission, which was enhanced by the lattice disorder. The results show that the PIII is an effective technique to introduce the disorder into Si lattice, which is used for Anderson localization and weak confinement.

Original language	English
Pages (from-to)	248-251
Number of pages	4
Journal	Journal of Applied Physics
Volume	96
Issue number	1
DOIs	https://doi.org/10.1063/1.1759784
Publication status	Published - 1 Jul 2004

Scopus Subject Areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1759784

Cite this

@article{9ddabf7d7c58418cacacd8a446e605f6,

title = "Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon",

abstract = "The low-temperature photoluminescence (PL) in the infrared band around the band gap of hydrogen beam-line and plasma implanted silicon and porous silicon was analyzed. The plasma immersion ion implantation (PIII) samples exhibited at least more than one peak at 1.17 eV and a wide photoluminescence band, while beam-line implanted samples exhibited a broad photoluminescence band below the band gap. It was observed that the peak at 1.17 eV was originated from nonphonon emission, which was enhanced by the lattice disorder. The results show that the PIII is an effective technique to introduce the disorder into Si lattice, which is used for Anderson localization and weak confinement.",

author = "Zhenghua An and Fu, {Ricky K.Y.} and Weili Li and Peng Chen and Chu, {Paul K.} and Li, {K. F.} and L. Luo and TAM, {Hoi Lam} and CHEAH, {Kok Wai} and Chenglu Lin",

note = "The work was supported by Hong Kong Research Grants Council (RGC) Competitive Earmarked Research Grants (CERG) Grant Nos. CityU 1052/02E and HKBU 2154/03E. ",

year = "2004",

month = jul,

day = "1",

doi = "10.1063/1.1759784",

language = "English",

volume = "96",

pages = "248--251",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

AU - An, Zhenghua

AU - Fu, Ricky K.Y.

AU - Li, Weili

AU - Chen, Peng

AU - Chu, Paul K.

AU - Li, K. F.

AU - Luo, L.

AU - TAM, Hoi Lam

AU - CHEAH, Kok Wai

AU - Lin, Chenglu

N1 - The work was supported by Hong Kong Research Grants Council (RGC) Competitive Earmarked Research Grants (CERG) Grant Nos. CityU 1052/02E and HKBU 2154/03E.

PY - 2004/7/1

Y1 - 2004/7/1

N2 - The low-temperature photoluminescence (PL) in the infrared band around the band gap of hydrogen beam-line and plasma implanted silicon and porous silicon was analyzed. The plasma immersion ion implantation (PIII) samples exhibited at least more than one peak at 1.17 eV and a wide photoluminescence band, while beam-line implanted samples exhibited a broad photoluminescence band below the band gap. It was observed that the peak at 1.17 eV was originated from nonphonon emission, which was enhanced by the lattice disorder. The results show that the PIII is an effective technique to introduce the disorder into Si lattice, which is used for Anderson localization and weak confinement.

AB - The low-temperature photoluminescence (PL) in the infrared band around the band gap of hydrogen beam-line and plasma implanted silicon and porous silicon was analyzed. The plasma immersion ion implantation (PIII) samples exhibited at least more than one peak at 1.17 eV and a wide photoluminescence band, while beam-line implanted samples exhibited a broad photoluminescence band below the band gap. It was observed that the peak at 1.17 eV was originated from nonphonon emission, which was enhanced by the lattice disorder. The results show that the PIII is an effective technique to introduce the disorder into Si lattice, which is used for Anderson localization and weak confinement.

UR - http://www.scopus.com/inward/record.url?scp=3142730011&partnerID=8YFLogxK

U2 - 10.1063/1.1759784

DO - 10.1063/1.1759784

M3 - Journal article

AN - SCOPUS:3142730011

SN - 0021-8979

VL - 96

SP - 248

EP - 251

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

Abstract

Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this