LOCAL VIBRATIONAL MODES AND THE OPTICAL ABSORPTION TAIL OF AMORPHOUS SILICON

P. K. Lim*, W. K. Tam

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Local vibrational modes of Si-H is an important research area in recent years. Local vibrational modes of chemical bonds between Si atom and other impurity atoms such as H and O in amorphous silicon films produced by radio frequency sputtering were studied by means of Fourier transform infrared spectroscopy. The concentrations of Si-H, Si-O and Si-C in the sample were calculated. It was found that the concentration of Si-H bond varied significantly when the material was annealed at temperatures T a>600 K and tended to zero for Ta>1000 K. The optical absorption edge was also found to depend strongly on the thermal history of the amorphous semiconductor. A strong correlation between the optical absorption coefficient and the concentration of Si-H was also observed.

Original languageEnglish
Pages (from-to)4261-4266
Number of pages6
JournalInternational Journal of Modern Physics B
Volume20
Issue number25-27
DOIs
Publication statusPublished - 30 Oct 2006
Externally publishedYes

Scopus Subject Areas

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics

User-Defined Keywords

  • Amorphous semiconductor
  • Impurity and defect levels
  • Optical spectroscopy
  • Thin film

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