Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices

Furong Zhu; Beeling Low; Keran Zhang; Soojin Chua

doi:10.1063/1.1396819

Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices

Furong Zhu^*
, Beeling Low
, Keran Zhang
, Soojin Chua

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

98 Citations (Scopus)

Abstract

Phenyl-substituted polymer electroluminescent (EL) devices using an insulating lithium–fluoride (LiF) layer between indium tin oxide (ITO) and poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT) hole transporting layer have been fabricated. By comparing the devices made without this layer, the results demonstrate that the former has a higher EL brightness operated at the same current density. At a given constant current density of 20 mA/cm², the luminance and efficiency for devices with 1.5 nm LiF-coated ITO were 1600 cd/m² and 7 cd/A. These values were 1170 cd/m² and 5.7 cd/A, respectively, for the same devices made with only an ITO anode. The ultrathin LiF layer between ITO and PEDOT modifies the hole injection properties. A more balanced charge carrier injection due to the anode modification by an ultrathin LiF layer is used to explain this enhancement.

Original language	English
Pages (from-to)	1205-1207
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	8
DOIs	https://doi.org/10.1063/1.1396819
Publication status	Published - 20 Aug 2001

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@article{6bfad244e6f746048972f84cec348b83,

title = "Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices",

abstract = "Phenyl-substituted polymer electroluminescent (EL) devices using an insulating lithium–fluoride (LiF) layer between indium tin oxide (ITO) and poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT) hole transporting layer have been fabricated. By comparing the devices made without this layer, the results demonstrate that the former has a higher EL brightness operated at the same current density. At a given constant current density of 20 mA/cm2, the luminance and efficiency for devices with 1.5 nm LiF-coated ITO were 1600 cd/m2 and 7 cd/A. These values were 1170 cd/m2 and 5.7 cd/A, respectively, for the same devices made with only an ITO anode. The ultrathin LiF layer between ITO and PEDOT modifies the hole injection properties. A more balanced charge carrier injection due to the anode modification by an ultrathin LiF layer is used to explain this enhancement.",

author = "Furong Zhu and Beeling Low and Keran Zhang and Soojin Chua",

note = "Publisher copyright: {\textcopyright} 2001 American Institute of Physics",

year = "2001",

month = aug,

day = "20",

doi = "10.1063/1.1396819",

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volume = "79",

pages = "1205--1207",

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publisher = "American Institute of Physics",

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T1 - Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices

AU - Zhu, Furong

AU - Low, Beeling

AU - Zhang, Keran

AU - Chua, Soojin

PY - 2001/8/20

Y1 - 2001/8/20

N2 - Phenyl-substituted polymer electroluminescent (EL) devices using an insulating lithium–fluoride (LiF) layer between indium tin oxide (ITO) and poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT) hole transporting layer have been fabricated. By comparing the devices made without this layer, the results demonstrate that the former has a higher EL brightness operated at the same current density. At a given constant current density of 20 mA/cm2, the luminance and efficiency for devices with 1.5 nm LiF-coated ITO were 1600 cd/m2 and 7 cd/A. These values were 1170 cd/m2 and 5.7 cd/A, respectively, for the same devices made with only an ITO anode. The ultrathin LiF layer between ITO and PEDOT modifies the hole injection properties. A more balanced charge carrier injection due to the anode modification by an ultrathin LiF layer is used to explain this enhancement.

AB - Phenyl-substituted polymer electroluminescent (EL) devices using an insulating lithium–fluoride (LiF) layer between indium tin oxide (ITO) and poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT) hole transporting layer have been fabricated. By comparing the devices made without this layer, the results demonstrate that the former has a higher EL brightness operated at the same current density. At a given constant current density of 20 mA/cm2, the luminance and efficiency for devices with 1.5 nm LiF-coated ITO were 1600 cd/m2 and 7 cd/A. These values were 1170 cd/m2 and 5.7 cd/A, respectively, for the same devices made with only an ITO anode. The ultrathin LiF layer between ITO and PEDOT modifies the hole injection properties. A more balanced charge carrier injection due to the anode modification by an ultrathin LiF layer is used to explain this enhancement.

UR - https://www.scopus.com/pages/publications/0035920924

U2 - 10.1063/1.1396819

DO - 10.1063/1.1396819

M3 - Journal article

AN - SCOPUS:0035920924

SN - 0003-6951

VL - 79

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EP - 1207

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices

Abstract

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