Layout small-angle rotation and shift for EUV defect mitigation

Hongbo Zhang; Yuelin Du; Martin D.F. Wong; Yunfei Deng; Pawitter Mangat

doi:10.1145/2429384.2429394

Layout small-angle rotation and shift for EUV defect mitigation

Hongbo Zhang^*, Yuelin Du, Martin D.F. Wong, Yunfei Deng, Pawitter Mangat

^*Corresponding author for this work

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Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

25 Citations (Scopus)

Abstract

Blank defect mitigation is crucial for extreme ultraviolet (EUV) lithography. One of the existing options is to relocate patterns to avoid defect impact. However, when the defect number increases, only pattern shift in X-Y directions becomes far from enough, requiring the reticle holder rotate a small angle to provide a third exploring dimension. This non-trivial extension from 2D to 3D exploration requests efficient runtime as well as enough accuracy to handle different defect sizes and locations on the different features. In this paper, we present the first work with a detailed algorithm to find the optimal shift and rotation for layout patterns on blanks. Compared to the straightforward method, which is to check every pair of defect and feature at every possible relocation position, our proposed algorithm can significantly reduce the runtime complexity to scale linearly with the size of the full solution space. The experimental results validate our method and show a largely increased success rate of defect mitigation by shift and rotation.

Original language	English
Title of host publication	ICCAD '12: Proceedings of the International Conference on Computer-Aided Design
Editors	Alan J. Hu
Publisher	Association for Computing Machinery (ACM)
Pages	43-49
Number of pages	7
ISBN (Print)	9781450315739
DOIs	https://doi.org/10.1145/2429384.2429394
Publication status	Published - 5 Nov 2012
Event	2012 30th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2012 - San Jose, CA, United States Duration: 5 Nov 2012 → 8 Nov 2012

Publication series

Name	IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
Publisher	Association for Computing Machinery
ISSN (Print)	1092-3152

Conference

Conference	2012 30th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2012
Country/Territory	United States
City	San Jose, CA
Period	5/11/12 → 8/11/12

Scopus Subject Areas

Software
Computer Science Applications
Computer Graphics and Computer-Aided Design

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10.1145/2429384.2429394

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Zhang, H., Du, Y., Wong, M. D. F., Deng, Y., & Mangat, P. (2012). Layout small-angle rotation and shift for EUV defect mitigation. In A. J. Hu (Ed.), ICCAD '12: Proceedings of the International Conference on Computer-Aided Design (pp. 43-49). (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD). Association for Computing Machinery (ACM). https://doi.org/10.1145/2429384.2429394

Zhang, Hongbo ; Du, Yuelin ; Wong, Martin D.F. et al. / Layout small-angle rotation and shift for EUV defect mitigation. ICCAD '12: Proceedings of the International Conference on Computer-Aided Design. editor / Alan J. Hu. Association for Computing Machinery (ACM), 2012. pp. 43-49 (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD).

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title = "Layout small-angle rotation and shift for EUV defect mitigation",

abstract = "Blank defect mitigation is crucial for extreme ultraviolet (EUV) lithography. One of the existing options is to relocate patterns to avoid defect impact. However, when the defect number increases, only pattern shift in X-Y directions becomes far from enough, requiring the reticle holder rotate a small angle to provide a third exploring dimension. This non-trivial extension from 2D to 3D exploration requests efficient runtime as well as enough accuracy to handle different defect sizes and locations on the different features. In this paper, we present the first work with a detailed algorithm to find the optimal shift and rotation for layout patterns on blanks. Compared to the straightforward method, which is to check every pair of defect and feature at every possible relocation position, our proposed algorithm can significantly reduce the runtime complexity to scale linearly with the size of the full solution space. The experimental results validate our method and show a largely increased success rate of defect mitigation by shift and rotation.",

author = "Hongbo Zhang and Yuelin Du and Wong, {Martin D.F.} and Yunfei Deng and Pawitter Mangat",

note = "Funding Information: This work was partially supported by the National Science Foundation under grant CCF-1017516 and a grant from the semiconductor Research Corporation (SRC). Publisher copyright: {\textcopyright} 2012 ACM; 2012 30th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2012 ; Conference date: 05-11-2012 Through 08-11-2012",

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Zhang, H, Du, Y, Wong, MDF, Deng, Y & Mangat, P 2012, Layout small-angle rotation and shift for EUV defect mitigation. in AJ Hu (ed.), ICCAD '12: Proceedings of the International Conference on Computer-Aided Design. IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD, Association for Computing Machinery (ACM), pp. 43-49, 2012 30th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2012, San Jose, CA, United States, 5/11/12. https://doi.org/10.1145/2429384.2429394

Layout small-angle rotation and shift for EUV defect mitigation. / Zhang, Hongbo; Du, Yuelin; Wong, Martin D.F. et al.
ICCAD '12: Proceedings of the International Conference on Computer-Aided Design. ed. / Alan J. Hu. Association for Computing Machinery (ACM), 2012. p. 43-49 (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD).

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

TY - GEN

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AU - Zhang, Hongbo

AU - Du, Yuelin

AU - Wong, Martin D.F.

AU - Deng, Yunfei

AU - Mangat, Pawitter

N1 - Funding Information: This work was partially supported by the National Science Foundation under grant CCF-1017516 and a grant from the semiconductor Research Corporation (SRC). Publisher copyright: © 2012 ACM

PY - 2012/11/5

Y1 - 2012/11/5

N2 - Blank defect mitigation is crucial for extreme ultraviolet (EUV) lithography. One of the existing options is to relocate patterns to avoid defect impact. However, when the defect number increases, only pattern shift in X-Y directions becomes far from enough, requiring the reticle holder rotate a small angle to provide a third exploring dimension. This non-trivial extension from 2D to 3D exploration requests efficient runtime as well as enough accuracy to handle different defect sizes and locations on the different features. In this paper, we present the first work with a detailed algorithm to find the optimal shift and rotation for layout patterns on blanks. Compared to the straightforward method, which is to check every pair of defect and feature at every possible relocation position, our proposed algorithm can significantly reduce the runtime complexity to scale linearly with the size of the full solution space. The experimental results validate our method and show a largely increased success rate of defect mitigation by shift and rotation.

AB - Blank defect mitigation is crucial for extreme ultraviolet (EUV) lithography. One of the existing options is to relocate patterns to avoid defect impact. However, when the defect number increases, only pattern shift in X-Y directions becomes far from enough, requiring the reticle holder rotate a small angle to provide a third exploring dimension. This non-trivial extension from 2D to 3D exploration requests efficient runtime as well as enough accuracy to handle different defect sizes and locations on the different features. In this paper, we present the first work with a detailed algorithm to find the optimal shift and rotation for layout patterns on blanks. Compared to the straightforward method, which is to check every pair of defect and feature at every possible relocation position, our proposed algorithm can significantly reduce the runtime complexity to scale linearly with the size of the full solution space. The experimental results validate our method and show a largely increased success rate of defect mitigation by shift and rotation.

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ER -

Zhang H, Du Y, Wong MDF, Deng Y, Mangat P. Layout small-angle rotation and shift for EUV defect mitigation. In Hu AJ, editor, ICCAD '12: Proceedings of the International Conference on Computer-Aided Design. Association for Computing Machinery (ACM). 2012. p. 43-49. (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD). doi: 10.1145/2429384.2429394

Layout small-angle rotation and shift for EUV defect mitigation

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