Laser-induced etching of silicon

C. H. Choy, Kok Wai CHEAH*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

Conventional fabrication method of porous silicon is anodisation of single crystal silicon in hydrofluoric acid. In this report, we show that it is possible to fabricate porous silicon by laser-induced etching. An earlier report by us has demonstrated the dependence of porous silicon photoluminescence characteristic on the etching laser wavelength [1]. Here we used 780 nm line from a diode laser as the etching source, and the optimum etching conditions were obtained. A simple model was proposed to explain the etching process. Scanning Electron Microscope (SEM) images of the samples support the proposed process.

Original languageEnglish
Pages (from-to)45-50
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Volume61
Issue number1
DOIs
Publication statusPublished - Jul 1995

Scopus Subject Areas

  • Chemistry(all)
  • Materials Science(all)

User-Defined Keywords

  • 78.65
  • 81.60.Cp
  • 82.50

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