Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopy

Furong Zhu; C.H.A. Huan; Keran Zhang; A.T.S. Wee

doi:10.1016/S0040-6090(99)00882-2

Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopy

Furong Zhu^*
, C.H.A. Huan
, Keran Zhang
, A.T.S. Wee

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

112 Citations (Scopus)

Abstract

Indium tin oxide (ITO) thin films have been deposited on substrates by the thermal evaporation method, followed by annealing in air. Post annealing effects on the composition and quality of ITO thin films were characterized by electron energy loss spectroscopy (EELS), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Spectroscopic and optical measurements showed that the low transparency of an as-deposited ITO film was mainly caused by diffusing species which probably consisted of reduced metallic indium particles and defects in the film formed during the preparation. EELS results revealed that these metallic indium particles could be removed by an annealing process leading to uniformly transparent conducting film. This work demonstrates that EELS is a sensitive method to diagnose the presence of the metallic indium in ITO films.

Original language	English
Pages (from-to)	244-250
Number of pages	7
Journal	Thin Solid Films
Volume	359
Issue number	2
Early online date	14 Dec 1999
DOIs	https://doi.org/10.1016/S0040-6090(99)00882-2
Publication status	Published - 31 Jan 2000

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@article{8a3c8965ddc04afea44be9ea35d9246f,

title = "Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopy",

abstract = "Indium tin oxide (ITO) thin films have been deposited on substrates by the thermal evaporation method, followed by annealing in air. Post annealing effects on the composition and quality of ITO thin films were characterized by electron energy loss spectroscopy (EELS), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Spectroscopic and optical measurements showed that the low transparency of an as-deposited ITO film was mainly caused by diffusing species which probably consisted of reduced metallic indium particles and defects in the film formed during the preparation. EELS results revealed that these metallic indium particles could be removed by an annealing process leading to uniformly transparent conducting film. This work demonstrates that EELS is a sensitive method to diagnose the presence of the metallic indium in ITO films.",

author = "Furong Zhu and C.H.A. Huan and Keran Zhang and A.T.S. Wee",

note = "Publisher copyright: {\textcopyright} 2000 Elsevier Science S.A.",

year = "2000",

month = jan,

day = "31",

doi = "10.1016/S0040-6090(99)00882-2",

language = "English",

volume = "359",

pages = "244--250",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopy

AU - Zhu, Furong

AU - Huan, C.H.A.

AU - Zhang, Keran

AU - Wee, A.T.S.

PY - 2000/1/31

Y1 - 2000/1/31

N2 - Indium tin oxide (ITO) thin films have been deposited on substrates by the thermal evaporation method, followed by annealing in air. Post annealing effects on the composition and quality of ITO thin films were characterized by electron energy loss spectroscopy (EELS), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Spectroscopic and optical measurements showed that the low transparency of an as-deposited ITO film was mainly caused by diffusing species which probably consisted of reduced metallic indium particles and defects in the film formed during the preparation. EELS results revealed that these metallic indium particles could be removed by an annealing process leading to uniformly transparent conducting film. This work demonstrates that EELS is a sensitive method to diagnose the presence of the metallic indium in ITO films.

AB - Indium tin oxide (ITO) thin films have been deposited on substrates by the thermal evaporation method, followed by annealing in air. Post annealing effects on the composition and quality of ITO thin films were characterized by electron energy loss spectroscopy (EELS), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). Spectroscopic and optical measurements showed that the low transparency of an as-deposited ITO film was mainly caused by diffusing species which probably consisted of reduced metallic indium particles and defects in the film formed during the preparation. EELS results revealed that these metallic indium particles could be removed by an annealing process leading to uniformly transparent conducting film. This work demonstrates that EELS is a sensitive method to diagnose the presence of the metallic indium in ITO films.

UR - https://www.scopus.com/pages/publications/0033908941

U2 - 10.1016/S0040-6090(99)00882-2

DO - 10.1016/S0040-6090(99)00882-2

M3 - Journal article

AN - SCOPUS:0033908941

SN - 0040-6090

VL - 359

SP - 244

EP - 250

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopy

Abstract

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