Interface dipole formation between GaMnAs and organic material

Wenjin Chen, Baikui Li, Hongtao He, Jiannong Wang*, Hoi Lam TAM, Kok Wai CHEAH, Xiancun Cao, Yuqi Wang, Guijun Lian, Guangcheng Xiong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The interface band alignment between GaMnAs and organic material was investigated by current transport measurement in hole only devices with GaMnAs/NPB/Al structure. The current density - voltage (J-V) curves were measured and numerical simulations performed on this device structure yielded the hole injection barrier between GaMnAs and NPB to be 0.77 eV. A vacuum level shift at GaMnAs/NPB interface was deduced as 0.54 eV, indicating a dipole layer across the interface. We attributed the vacuum level shift to the charge transfer across the interface.

Original languageEnglish
Article number012105
JournalJournal of Physics: Conference Series
Volume193
DOIs
Publication statusPublished - 2009

Scopus Subject Areas

  • Physics and Astronomy(all)

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