Interface dipole formation between GaMnAs and organic material

Wenjin Chen; Baikui Li; Hongtao He; Jiannong Wang; Hoi Lam TAM; Kok Wai CHEAH; Xiancun Cao; Yuqi Wang; Guijun Lian; Guangcheng Xiong

doi:10.1088/1742-6596/193/1/012105

Interface dipole formation between GaMnAs and organic material

Wenjin Chen, Baikui Li, Hongtao He, Jiannong Wang^*, Hoi Lam TAM, Kok Wai CHEAH, Xiancun Cao, Yuqi Wang, Guijun Lian, Guangcheng Xiong

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

Abstract

The interface band alignment between GaMnAs and organic material was investigated by current transport measurement in hole only devices with GaMnAs/NPB/Al structure. The current density - voltage (J-V) curves were measured and numerical simulations performed on this device structure yielded the hole injection barrier between GaMnAs and NPB to be 0.77 eV. A vacuum level shift at GaMnAs/NPB interface was deduced as 0.54 eV, indicating a dipole layer across the interface. We attributed the vacuum level shift to the charge transfer across the interface.

Original language	English
Article number	012105
Journal	Journal of Physics: Conference Series
Volume	193
DOIs	https://doi.org/10.1088/1742-6596/193/1/012105
Publication status	Published - 2009

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Physics and Astronomy(all)

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10.1088/1742-6596/193/1/012105

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title = "Interface dipole formation between GaMnAs and organic material",

abstract = "The interface band alignment between GaMnAs and organic material was investigated by current transport measurement in hole only devices with GaMnAs/NPB/Al structure. The current density - voltage (J-V) curves were measured and numerical simulations performed on this device structure yielded the hole injection barrier between GaMnAs and NPB to be 0.77 eV. A vacuum level shift at GaMnAs/NPB interface was deduced as 0.54 eV, indicating a dipole layer across the interface. We attributed the vacuum level shift to the charge transfer across the interface.",

author = "Wenjin Chen and Baikui Li and Hongtao He and Jiannong Wang and TAM, {Hoi Lam} and CHEAH, {Kok Wai} and Xiancun Cao and Yuqi Wang and Guijun Lian and Guangcheng Xiong",

year = "2009",

doi = "10.1088/1742-6596/193/1/012105",

language = "English",

volume = "193",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

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TY - JOUR

T1 - Interface dipole formation between GaMnAs and organic material

AU - Chen, Wenjin

AU - Li, Baikui

AU - He, Hongtao

AU - Wang, Jiannong

AU - TAM, Hoi Lam

AU - CHEAH, Kok Wai

AU - Cao, Xiancun

AU - Wang, Yuqi

AU - Lian, Guijun

AU - Xiong, Guangcheng

PY - 2009

Y1 - 2009

N2 - The interface band alignment between GaMnAs and organic material was investigated by current transport measurement in hole only devices with GaMnAs/NPB/Al structure. The current density - voltage (J-V) curves were measured and numerical simulations performed on this device structure yielded the hole injection barrier between GaMnAs and NPB to be 0.77 eV. A vacuum level shift at GaMnAs/NPB interface was deduced as 0.54 eV, indicating a dipole layer across the interface. We attributed the vacuum level shift to the charge transfer across the interface.

AB - The interface band alignment between GaMnAs and organic material was investigated by current transport measurement in hole only devices with GaMnAs/NPB/Al structure. The current density - voltage (J-V) curves were measured and numerical simulations performed on this device structure yielded the hole injection barrier between GaMnAs and NPB to be 0.77 eV. A vacuum level shift at GaMnAs/NPB interface was deduced as 0.54 eV, indicating a dipole layer across the interface. We attributed the vacuum level shift to the charge transfer across the interface.

UR - http://www.scopus.com/inward/record.url?scp=74549154455&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/193/1/012105

DO - 10.1088/1742-6596/193/1/012105

M3 - Journal article

AN - SCOPUS:74549154455

SN - 1742-6588

VL - 193

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

M1 - 012105

ER -

Interface dipole formation between GaMnAs and organic material

Abstract

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