Interaction range of P-dopants in Si[110] nanowires: Determining the nondegenerate limit

Anthony T L CHAN*, Alex J. Lee, Alex W K MOK, James R. Chelikowsky

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

1 Citation (Scopus)

Abstract

It is well known that the activation energy of dopants in semiconducting nanomaterials is higher than in bulk materials owing to dielectric mismatch and quantum confinement. This quenches the number of free charge carriers in nanomaterials. Though higher doping concentration can compensate for this effect, there is no clear criterion on what the doping concentration should be. Using P-doped Si[110] nanowires as the prototypical system, we address this issue by establishing a doping limit by first-principles electronic structure calculations. We examine how the doped nanowires respond to charging using an effective capacitance approach. As the nanowire gets thinner, the interaction range of the P dopants shortens and the doping concentration can increase concurrently. Hence, heavier doping can remain nondegenerate for thin nanowires.

Original languageEnglish
Pages (from-to)6306-6313
Number of pages8
JournalNano Letters
Volume14
Issue number11
DOIs
Publication statusPublished - 12 Nov 2014

Scopus Subject Areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

User-Defined Keywords

  • capacitance
  • Doping
  • first-principles electronic structure calculation
  • nanowire

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