Integrated complementary inverters and ring oscillators based on vertical-channel dual-base organic thin-film transistors

Erjuan Guo*, Shen Xing, Felix Dollinger, René Hübner, Shu Jen Wang, Zhongbin Wu*, Karl Leo, Hans Kleemann*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

31 Citations (Scopus)

Abstract

Lateral-channel dual-gate organic thin-film transistors have been used in pseudo complementary metal–oxide–semiconductor (CMOS) inverters to control switching voltage. However, their relatively long channel lengths, combined with the low charge carrier mobility of organic semiconductors, typically leads to slow inverter operation. Vertical-channel dual-gate organic thin-film transistors are a promising alternative because of their short channel lengths, but the lack of appropriate p- and n-type devices has limited the development of complementary inverter circuits. Here, we show that organic vertical n-channel permeable single- and dual-base transistors, and vertical p-channel permeable base transistors can be used to create integrated complementary inverters and ring oscillators. The vertical dual-base transistors enable switching voltage shift and gain enhancement. The inverters exhibit small switching time constants at 10 MHz, and the seven-stage complementary ring oscillators exhibit short signal propagation delays of 11 ns per stage at a supply voltage of 4 V.

Original languageEnglish
Pages (from-to)588-594
Number of pages7
JournalNature Electronics
Volume4
Issue number8
Early online date15 Jul 2021
DOIs
Publication statusPublished - Aug 2021

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