Influence of nanocrystal size on optical properties of Si nanocrystals embedded in Si O2 synthesized by Si ion implantation

L. Ding*, T. P. Chen, Y. Liu, M. Yang, J. I. Wong, Y. C. Liu, A. D. Trigg, Furong Zhu, M. C. Tan, S. Fung

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

46 Citations (Scopus)

Abstract

Si nanocrystals (nc-Si) with different sizes embedded in Si O2 matrix have been synthesized with various recipes of Si ion implantation. The influence of nanocrystal size on optical properties, including dielectric functions and optical constants, of the nc-Si has been investigated with spectroscopic ellipsometry. The optical properties of the nc-Si are found to be well described by the four-term Forouhi-Bloomer model. A strong dependence of the dielectric functions and optical constants on the nc-Si size is observed. For the imaginary part of the dielectric functions, the magnitude of the main peaks at the transition energies E1 and E2 exhibits a large reduction and a significant redshift in E2 depending on the nc-Si size. A band gap expansion is observed when the nc-Si size is reduced. The band gap expansion with the reduction of nc-Si size is in good agreement with the prediction of first-principles calculations based on quantum confinement.

Original languageEnglish
Article number103525
Number of pages6
JournalJournal of Applied Physics
Volume101
Issue number10
DOIs
Publication statusPublished - 15 May 2007

Scopus Subject Areas

  • Physics and Astronomy(all)

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