Influence of nanocrystal distribution on electroluminescence from Si +-implanted SiO2 thin films

L. Ding*, T. P. Chen, M. Yang, Furong Zhu

*Corresponding author for this work

Research output: Chapter in book/report/conference proceedingConference proceedingpeer-review


Light emitting diodes (LEDs) based on a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in SiO2 have been fabricated with low-energy ion implantation. Under a negative gate voltage as low as ~-5 V, both visible and infrared (IR) electroluminescence (EL) have been observed at room temperature. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ~460, ~600, ~740, and ~1260 nm, in which the ~600-nm band dominants the spectra. The EL properties have been investigated together with the current transport properties of the Si+-implanted SiO2 films. A systematic study has been carried out on the effect of the Si ion implantation dose and the energy on both the current transport and EL properties. The mechanisms of the origin of the four different EL bands have been proposed and discussed.

Original languageEnglish
Title of host publicationSilicon Photonics III
EditorsJoel A. Kubby, Graham T. Reed
ISBN (Print)9780819470737
Publication statusPublished - 13 Feb 2008
EventSilicon Photonics III: Integrated Optoelectronic Devices 2008 - San Jose, CA, United States
Duration: 19 Jan 200824 Jan 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceSilicon Photonics III
Country/TerritoryUnited States
CitySan Jose, CA

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

User-Defined Keywords

  • Electroluminescence
  • Implantation
  • Nanocrystals


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