Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

Y. Liu; T. P. Chen; L. Ding; M. Yang; J. I. Wong; C. Y. Ng; S. F. Yu; Z. X. Li; C. Yuen; Furong Zhu; M. C. Tan; S. Fung

doi:10.1063/1.2713946

Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

Y. Liu, T. P. Chen^*, L. Ding, M. Yang, J. I. Wong, C. Y. Ng, S. F. Yu, Z. X. Li, C. Yuen, Furong Zhu, M. C. Tan, S. Fung

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

24 Citations (Scopus)

Abstract

We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.

Original language	English
Article number	104306
Number of pages	4
Journal	Journal of Applied Physics
Volume	101
Issue number	10
DOIs	https://doi.org/10.1063/1.2713946
Publication status	Published - 15 May 2007

Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.2713946

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@article{2ca530372776481591efbf32366f99b2,

title = "Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure",

abstract = "We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.",

author = "Y. Liu and Chen, {T. P.} and L. Ding and M. Yang and Wong, {J. I.} and Ng, {C. Y.} and Yu, {S. F.} and Li, {Z. X.} and C. Yuen and Furong Zhu and Tan, {M. C.} and S. Fung",

note = "Funding Information: This work has been financially supported by the Academic Research Fund of the Ministry of Education, Singapore, under Project No. ARC 1/04 and by the Singapore Millennium Fund.",

year = "2007",

month = may,

day = "15",

doi = "10.1063/1.2713946",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

AU - Liu, Y.

AU - Chen, T. P.

AU - Ding, L.

AU - Yang, M.

AU - Wong, J. I.

AU - Ng, C. Y.

AU - Yu, S. F.

AU - Li, Z. X.

AU - Yuen, C.

AU - Zhu, Furong

AU - Tan, M. C.

AU - Fung, S.

N1 - Funding Information: This work has been financially supported by the Academic Research Fund of the Ministry of Education, Singapore, under Project No. ARC 1/04 and by the Singapore Millennium Fund.

PY - 2007/5/15

Y1 - 2007/5/15

N2 - We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.

AB - We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.

UR - http://www.scopus.com/inward/record.url?scp=34249908947&partnerID=8YFLogxK

U2 - 10.1063/1.2713946

DO - 10.1063/1.2713946

M3 - Journal article

AN - SCOPUS:34249908947

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 104306

ER -

Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

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