Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

Y. Liu, T. P. Chen*, L. Ding, M. Yang, J. I. Wong, C. Y. Ng, S. F. Yu, Z. X. Li, C. Yuen, Furong Zhu, M. C. Tan, S. Fung

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

24 Citations (Scopus)


We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.

Original languageEnglish
Article number104306
Number of pages4
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 15 May 2007

Scopus Subject Areas

  • Physics and Astronomy(all)


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