Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering

Keran Zhang; Furong Zhu; C. H. A. Huan; A. T. S. Wee; T. Osipowicz

doi:10.1002/(SICI)1096-9918(199908)28:1<271::AID-SIA592>3.0.CO;2-1

Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering

Keran Zhang
, Furong Zhu
, C. H. A. Huan^*
, A. T. S. Wee
, T. Osipowicz

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

22 Citations (Scopus)

Abstract

Indium-doped zinc oxide (ZnO:In) films were prepared by simultaneous r.f. and d.c. magnetron sputtering. The structural, optical and electrical properties of the films have been obtained by x-ray diffractometry (XRD), Rutherford backscattering spectrometry (RBS), spectrophotometry and atomic force microscopy (AFM) together with four-point probe measurements. The XRD pattern shows ZnO(002) to be the preferred film orientation. The deposited In/Zn atomic ratio is ~0.4. Uniform ZnO:In films with a resistivity of approximately 7×10^-4Ω.cm and a high transparency (>85%) were achieved, with further optimization possible.

Original language	English
Pages (from-to)	271-274
Number of pages	4
Journal	Surface and Interface Analysis
Volume	28
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1096-9918(199908)28:1<271::AID-SIA592>3.0.CO;2-1
Publication status	Published - 6 Aug 1999

User-Defined Keywords

ZnO:In films
d.c. and r.f. magnetron sputtering
RBS
XRD

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10.1002/(SICI)1096-9918(199908)28:1<271::AID-SIA592>3.0.CO;2-1

Cite this

@article{3295344e5a704b2e879dc334bd8c102f,

title = "Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering",

abstract = "Indium-doped zinc oxide (ZnO:In) films were prepared by simultaneous r.f. and d.c. magnetron sputtering. The structural, optical and electrical properties of the films have been obtained by x-ray diffractometry (XRD), Rutherford backscattering spectrometry (RBS), spectrophotometry and atomic force microscopy (AFM) together with four-point probe measurements. The XRD pattern shows ZnO(002) to be the preferred film orientation. The deposited In/Zn atomic ratio is \textasciitilde{}0.4. Uniform ZnO:In films with a resistivity of approximately 7×10-4 Ω.cm and a high transparency (>85\%) were achieved, with further optimization possible.",

keywords = "ZnO:In films, d.c. and r.f. magnetron sputtering, RBS, XRD",

author = "Keran Zhang and Furong Zhu and Huan, \{C. H. A.\} and Wee, \{A. T. S.\} and T. Osipowicz",

note = "Publisher copyright: {\textcopyright} 1999 John Wiley \& Sons, Ltd.",

year = "1999",

month = aug,

day = "6",

doi = "10.1002/(SICI)1096-9918(199908)28:1<271::AID-SIA592>3.0.CO;2-1",

language = "English",

volume = "28",

pages = "271--274",

journal = "Surface and Interface Analysis",

issn = "0142-2421",

publisher = "John Wiley \& Sons Ltd",

number = "1",

}

TY - JOUR

T1 - Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering

AU - Zhang, Keran

AU - Zhu, Furong

AU - Huan, C. H. A.

AU - Wee, A. T. S.

AU - Osipowicz, T.

PY - 1999/8/6

Y1 - 1999/8/6

N2 - Indium-doped zinc oxide (ZnO:In) films were prepared by simultaneous r.f. and d.c. magnetron sputtering. The structural, optical and electrical properties of the films have been obtained by x-ray diffractometry (XRD), Rutherford backscattering spectrometry (RBS), spectrophotometry and atomic force microscopy (AFM) together with four-point probe measurements. The XRD pattern shows ZnO(002) to be the preferred film orientation. The deposited In/Zn atomic ratio is ~0.4. Uniform ZnO:In films with a resistivity of approximately 7×10-4 Ω.cm and a high transparency (>85%) were achieved, with further optimization possible.

AB - Indium-doped zinc oxide (ZnO:In) films were prepared by simultaneous r.f. and d.c. magnetron sputtering. The structural, optical and electrical properties of the films have been obtained by x-ray diffractometry (XRD), Rutherford backscattering spectrometry (RBS), spectrophotometry and atomic force microscopy (AFM) together with four-point probe measurements. The XRD pattern shows ZnO(002) to be the preferred film orientation. The deposited In/Zn atomic ratio is ~0.4. Uniform ZnO:In films with a resistivity of approximately 7×10-4 Ω.cm and a high transparency (>85%) were achieved, with further optimization possible.

KW - ZnO:In films

KW - d.c. and r.f. magnetron sputtering

KW - RBS

KW - XRD

UR - https://www.scopus.com/pages/publications/0032642617

U2 - 10.1002/(SICI)1096-9918(199908)28:1<271::AID-SIA592>3.0.CO;2-1

DO - 10.1002/(SICI)1096-9918(199908)28:1<271::AID-SIA592>3.0.CO;2-1

M3 - Journal article

AN - SCOPUS:0032642617

SN - 0142-2421

VL - 28

SP - 271

EP - 274

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 1

ER -

Indium-doped zinc oxide films prepared by simultaneous r.f. and d.c. magnetron sputtering

Abstract

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