Implant Energy-Dependent Enhancement of Electroluminescence from Ge-Implanted SiO2 Thin Films

M. Yang; T. P. Chen; L. Ding; J. I. Wong; Y. Liu; W. L. Zhang; S. Zhang; F. Zhu; W. P. Goh

doi:10.1149/1.3118524

Implant Energy-Dependent Enhancement of Electroluminescence from Ge-Implanted SiO₂ Thin Films

M. Yang, T. P. Chen^*, L. Ding, J. I. Wong, Y. Liu, W. L. Zhang, S. Zhang, F. Zhu, W. P. Goh

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

7 Citations (Scopus)

Abstract

Electroluminescence (EL) consisting of three bands at 500, 600, and 760 nm, respectively, is observed from the 30 nm SiO₂ implanted with Ge ions at low energies. The EL intensity under either constant-voltage or constant-current injection is significantly enhanced by higher implant energy. It is shown that the EL enhancement is partially due to the enhanced current conduction as a result of the change in Ge distribution. The external quantum efficiency also increases with implant energy. The phenomenon is attributed to the increase of implant-generated luminescence centers in the oxide, which is supported by the stopping-and-range-of-ions-in-matter simulation of defect generation.

Original language	English
Pages (from-to)	H238-H240
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1149/1.3118524
Publication status	Published - 10 Apr 2009

Scopus Subject Areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{52fa1dde1ced4e509857adcfba187b9b,

title = "Implant Energy-Dependent Enhancement of Electroluminescence from Ge-Implanted SiO2 Thin Films",

abstract = "Electroluminescence (EL) consisting of three bands at 500, 600, and 760 nm, respectively, is observed from the 30 nm SiO2 implanted with Ge ions at low energies. The EL intensity under either constant-voltage or constant-current injection is significantly enhanced by higher implant energy. It is shown that the EL enhancement is partially due to the enhanced current conduction as a result of the change in Ge distribution. The external quantum efficiency also increases with implant energy. The phenomenon is attributed to the increase of implant-generated luminescence centers in the oxide, which is supported by the stopping-and-range-of-ions-in-matter simulation of defect generation.",

author = "M. Yang and Chen, {T. P.} and L. Ding and Wong, {J. I.} and Y. Liu and Zhang, {W. L.} and S. Zhang and F. Zhu and Goh, {W. P.}",

note = "Publisher copyright: {\textcopyright} 2009 ECS - The Electrochemical Society",

year = "2009",

month = apr,

day = "10",

doi = "10.1149/1.3118524",

language = "English",

volume = "12",

pages = "H238--H240",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Implant Energy-Dependent Enhancement of Electroluminescence from Ge-Implanted SiO2 Thin Films

AU - Yang, M.

AU - Chen, T. P.

AU - Ding, L.

AU - Wong, J. I.

AU - Liu, Y.

AU - Zhang, W. L.

AU - Zhang, S.

AU - Zhu, F.

AU - Goh, W. P.

PY - 2009/4/10

Y1 - 2009/4/10

N2 - Electroluminescence (EL) consisting of three bands at 500, 600, and 760 nm, respectively, is observed from the 30 nm SiO2 implanted with Ge ions at low energies. The EL intensity under either constant-voltage or constant-current injection is significantly enhanced by higher implant energy. It is shown that the EL enhancement is partially due to the enhanced current conduction as a result of the change in Ge distribution. The external quantum efficiency also increases with implant energy. The phenomenon is attributed to the increase of implant-generated luminescence centers in the oxide, which is supported by the stopping-and-range-of-ions-in-matter simulation of defect generation.

AB - Electroluminescence (EL) consisting of three bands at 500, 600, and 760 nm, respectively, is observed from the 30 nm SiO2 implanted with Ge ions at low energies. The EL intensity under either constant-voltage or constant-current injection is significantly enhanced by higher implant energy. It is shown that the EL enhancement is partially due to the enhanced current conduction as a result of the change in Ge distribution. The external quantum efficiency also increases with implant energy. The phenomenon is attributed to the increase of implant-generated luminescence centers in the oxide, which is supported by the stopping-and-range-of-ions-in-matter simulation of defect generation.

UR - http://www.scopus.com/inward/record.url?scp=69149110612&partnerID=8YFLogxK

U2 - 10.1149/1.3118524

DO - 10.1149/1.3118524

M3 - Journal article

AN - SCOPUS:69149110612

SN - 1099-0062

VL - 12

SP - H238-H240

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Implant Energy-Dependent Enhancement of Electroluminescence from Ge-Implanted SiO₂ Thin Films

Abstract

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