Implant Energy-Dependent Enhancement of Electroluminescence from Ge-Implanted SiO2 Thin Films

M. Yang, T. P. Chen*, L. Ding, J. I. Wong, Y. Liu, W. L. Zhang, S. Zhang, F. Zhu, W. P. Goh

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

7 Citations (Scopus)


Electroluminescence (EL) consisting of three bands at 500, 600, and 760 nm, respectively, is observed from the 30 nm SiO2 implanted with Ge ions at low energies. The EL intensity under either constant-voltage or constant-current injection is significantly enhanced by higher implant energy. It is shown that the EL enhancement is partially due to the enhanced current conduction as a result of the change in Ge distribution. The external quantum efficiency also increases with implant energy. The phenomenon is attributed to the increase of implant-generated luminescence centers in the oxide, which is supported by the stopping-and-range-of-ions-in-matter simulation of defect generation.

Original languageEnglish
Pages (from-to)H238-H240
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number7
Publication statusPublished - 10 Apr 2009

Scopus Subject Areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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